公开(公告)号：US20230420259A1

公开(公告)日：2023-12-28

申请号：US17836562

申请日：2022-06-09

Applicant: APPLIED MATERIALS, INC.

Inventor： David Thompson ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lisa Enman ,  Aaron Dangerfield ,  Jesus Candelario Mendoza ,  Jeffrey W. Anthis ,  Lakmal Kalutarage

IPC: H01L21/306 ,  H01L21/308 ,  H01L21/02

CPC classification number: H01L21/30604 ,  H01L21/02118 ,  H01L21/3081

Abstract: Described herein is a method for selectively cleaning and/or etching a sample. The method includes selectively forming a film in a trench of a substrate such that the trench may be selectively etched. A polymer film is deposited on the bottom surface of the trench without being deposited on the side wall. A second film is selectively formed in the trench without forming the second film on the polymer film. The polymer is then removed from the bottom surface of the trench and then etching is performed on the bottom surface of the trench using an etch chemistry, wherein the second film protects the side wall from being etched.

公开(公告)号：US12261049B2

公开(公告)日：2025-03-25

申请号：US17836562

申请日：2022-06-09

Applicant: APPLIED MATERIALS, INC.

Inventor： David Thompson ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lisa Enman ,  Aaron Dangerfield ,  Jesus Candelario Mendoza ,  Jeffrey W. Anthis ,  Lakmal Kalutarage

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

Abstract: Described herein is a method for selectively cleaning and/or etching a sample. The method includes selectively forming a film in a trench of a substrate such that the trench may be selectively etched. A polymer film is deposited on the bottom surface of the trench without being deposited on the side wall. A second film is selectively formed in the trench without forming the second film on the polymer film. The polymer is then removed from the bottom surface of the trench and then etching is performed on the bottom surface of the trench using an etch chemistry, wherein the second film protects the side wall from being etched.

公开(公告)号：US20240247370A1

公开(公告)日：2024-07-25

申请号：US18099459

申请日：2023-01-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Jeffrey W. Anthis ,  Nasrin Kazem ,  Lakmal Charidu Kalutarage ,  Jayden Stephen John Shackerley Potter ,  Thomas Joseph Knisley ,  Lisa Enman

IPC: C23C16/40 ,  C23C16/455 ,  H01B1/08 ,  H01L21/285 ,  H01L33/42

CPC classification number: C23C16/40 ,  C23C16/45536 ,  C23C16/45553 ,  H01B1/08 ,  H01L21/28568 ,  H01L33/42 ,  H01L2933/0016

Abstract: A method includes depositing a coating including stoichiometric one-to-one ruthenium oxide (RuO) onto a surface of a substrate. The coating is deposited by performing an atomic layer deposition (ALD) process using at least one precursor.