公开(公告)号：US20040206628A1

公开(公告)日：2004-10-21

申请号：US10823840

申请日：2004-04-13

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Michael Yang

IPC: C25D005/00

CPC classification number: C25D21/00 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885

Abstract: Embodiments of the invention generally provide a method for removing a substrate from a processing fluid contained in a processing cell. The method includes tilting the substrate to a tilt angle, rotating the substrate, vertically moving the substrate upward out of the processing fluid, and applying an electrical removal bias to the substrate during the vertical movement of the substrate out of the processing fluid.

Abstract translation: 本发明的实施例通常提供从处理单元中包含的处理流体中去除衬底的方法。 该方法包括将衬底倾斜到倾斜角度，旋转衬底，将衬底向上垂直移动到处理流体之外，以及在衬底垂直移动到处理流体之前向衬底施加电去除偏压。

公开(公告)号：US20030019428A1

公开(公告)日：2003-01-30

申请号：US10134206

申请日：2002-04-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Vincent W. Ku ,  Anzhong Chang ,  Anh N. Nguyen ,  Ming Xi ,  Xiaoxiong Yuan ,  Juan B. Tuscano JR. ,  Lawrence C. Lei ,  Seshadri Ganguli ,  Michael Yang ,  Chen-An Chen ,  Ling Chen

IPC: C23C016/00 ,  C23F001/00 ,  H01L021/306

CPC classification number: C23C16/45565 ,  C23C16/455 ,  C23C16/45512

Abstract: A processing chamber is adapted to perform a deposition process on a substrate. The chamber includes a pedestal adapted to hold a substrate during deposition and a gas mixing and distribution assembly mounted above the pedestal. The gas mixing and distribution assembly includes a face plate, a dispersion plate mounted above the face plate, and a mixing fixture mounted above the dispersion plate. The face plate is adapted to present an emissivity invariant configuration to the pedestal. The mixing fixture includes a mixing chamber to which a process gas is flowed and an outer chamber surrounding the mixing chamber. The processing chamber further includes an enclosure and a liner installed inside the enclosure and surrounding the pedestal. The liner defines a gap between the liner and the enclosure. The gap has a minimum width adjacent an exhaust port and a maximum width at a point that is diametrically opposite the exhaust port.

Abstract translation: 处理室适于在基板上执行沉积处理。 腔室包括适于在沉积期间保持基底的基座和安装在基座上方的气体混合和分配组件。 气体混合分配组件包括面板，安装在面板上方的分散板和安装在分散板上方的混合夹具。 面板适于向基座呈现发射率不变构型。 混合夹具包括处理气体流过的混合室和围绕混合室的外室。 处理室还包括外壳和安装在外壳内并围绕基座的衬垫。 衬套限定了衬套和外壳之间的间隙。 该间隙具有邻近排气口的最小宽度和在与排气口径向相反的点处的最大宽度。

公开(公告)号：US20040154915A1

公开(公告)日：2004-08-12

申请号：US10360234

申请日：2003-02-06

Applicant: Applied Materials, Inc.

Inventor： Nicolay Kovarsky ,  Michael Yang ,  Dmitry Lubomirsky

IPC: C25B015/00

CPC classification number: H01L21/2885 ,  C25D17/001

Abstract: Embodiments of the invention generally provide a substrate processing system and method. The substrate processing system generally includes a fluid basin configured to contain a plating solution therein, an anode assembly positioned in a lower portion of the fluid basin, a separation membrane positioned across the fluid basin above the anode assembly, a diffusion member positioned across the fluid basin above the separation membrane, and a plating membrane positioned across the fluid basin above the diffusion member. The plating method generally includes immersing the substrate in a plating solution, the plating solution containing metal ions to be plated, contacting a plating surface of the semiconductor substrate with a plating membrane, applying a plating bias to the semiconductor substrate to plate the metal ions in the plating solution positioned adjacent the plating surface of the substrate, removing the plating surface from contact with the plating membrane for a predetermined period of time, and recontacting the plating surface with the plating membrane to continue plating the metal ions onto the plating surface.

Abstract translation: 本发明的实施例通常提供一种基板处理系统和方法。 衬底处理系统通常包括配置成在其中容纳电镀液的流体池，位于流体池的下部的阳极组件，位于阳极组件上方的横跨流体池的隔离膜，跨过流体定位的扩散构件 在分离膜之上的盆地，以及位于扩散构件上方的横跨流体池的镀膜。 电镀方法通常包括将衬底浸入电镀溶液中，镀敷溶液含有待镀覆的金属离子，与半导体衬底的电镀表面接触镀覆膜，向半导体衬底施加电镀偏压以将金属离子 所述电镀液位于所述基板的电镀面附近，除去所述电镀表面与所述镀膜接触预定的时间，并且将所述电镀表面与所述电镀膜重新接触以继续将所述金属离子电镀到所述电镀表面上。