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1.发明授权公开(公告)号：US11810770B2
公开(公告)日：2023-11-07
申请号：US17490840
申请日：2021-09-30
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong Wang , Joung Joo Lee , Fuhong Zhang , Martin Lee Riker , Keith A. Miller , William Fruchterman , Rongjun Wang , Adolph Miller Allen , Shouyin Zhang , Xianmin Tang
CPC classification number: H01J37/3458 , C23C14/345 , C23C14/351 , C23C14/54 , H01J37/3402 , H01J37/345 , H01J37/3405 , H01J37/3411 , H01J37/3441 , H01J37/3447 , H01J37/3452 , H01J37/3455
Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.
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公开(公告)号：US10157733B2
公开(公告)日：2018-12-18
申请号：US15409195
申请日：2017-01-18
Applicant: APPLIED MATERIALS, INC.
Inventor： Shouyin Zhang , Fuhong Zhang , Joung Joo Lee
Abstract: Embodiments of method for igniting a plasma are provided herein. In some embodiments, a method for igniting a plasma includes: flowing a process gas into a process chamber to increase a pressure within the process chamber to a first pressure; applying a first bias voltage from a collimator power source to a collimator disposed within the process chamber; and applying a second power to a sputtering source disposed in the process chamber above the collimator after the first pressure has been reached and the first bias voltage is applied to ignite the plasma.
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公开(公告)号：US20220162746A1
公开(公告)日：2022-05-26
申请号：US17535638
申请日：2021-11-25
Applicant: Applied Materials, Inc.
Inventor： Shouyin Zhang , Keith A. Miller
Abstract: Power supplies, waveform function generators and methods for controlling a plasma process are described. The power supplies or waveform function generators include a component for executing the method in which a waveform shape change index is determined during a plasma process and evaluated for compliance with a predetermined tolerance.
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Patent Agency Ranking
公开(公告)号：US12281381B2
公开(公告)日：2025-04-22
申请号：US17512390
申请日：2021-10-27
Applicant: Applied Materials, Inc.
Inventor： Sireesh Adimadhyam , Shouyin Zhang
Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying pulsed DC power to a target disposed in a processing volume of a processing chamber for depositing sputter material onto a substrate, during a pulse off time, determining if a reverse current is equal to or greater than at least one of a first threshold or a second threshold different from the first threshold, and if the reverse current is equal to or greater than the at least one of the first threshold or second threshold, generate a pulsed DC power shutdown response, and if the reverse current is not equal to or greater than the at least one of the first threshold or second threshold, continue supplying pulsed DC power to the target.
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5.发明授权公开(公告)号：US12094699B2
公开(公告)日：2024-09-17
申请号：US18237934
申请日：2023-08-25
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong Wang , Joung Joo Lee , Fuhong Zhang , Martin Lee Riker , Keith A. Miller , William Fruchterman , Rongjun Wang , Adolph Miller Allen , Shouyin Zhang , Xianmin Tang
CPC classification number: H01J37/3458 , C23C14/345 , C23C14/351 , C23C14/54 , H01J37/3402 , H01J37/3405 , H01J37/3411 , H01J37/3441 , H01J37/3447 , H01J37/345 , H01J37/3452 , H01J37/3455
Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.
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公开(公告)号：US20220356559A1
公开(公告)日：2022-11-10
申请号：US17858592
申请日：2022-07-06
Applicant: Applied Materials, Inc.
Inventor： Shouyin Zhang , Keith A. Miller
Abstract: Power supplies, waveform function generators and methods for controlling a plasma process are described. The power supplies or waveform function generators include a component for executing the method in which a waveform shape change index is determined during a plasma process and evaluated for compliance with a predetermined tolerance.
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公开(公告)号：US12018361B2
公开(公告)日：2024-06-25
申请号：US17858592
申请日：2022-07-06
Applicant: Applied Materials, Inc.
Inventor： Shouyin Zhang , Keith A. Miller
CPC classification number: C23C14/54 , C23C14/28 , H01J37/32917 , H05H1/0081 , H05H2242/20
Abstract: Power supplies, waveform function generators and methods for controlling a plasma process are described. The power supplies or waveform function generators include a component for executing the method in which a waveform shape change index is determined during a plasma process and evaluated for compliance with a predetermined tolerance.
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8.发明授权公开(公告)号：US11037768B2
公开(公告)日：2021-06-15
申请号：US15448996
申请日：2017-03-03
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong Wang , Joung Joo Lee , Fuhong Zhang , Martin Lee Riker , Keith A. Miller , William Fruchterman , Rongjun Wang , Adolph Miller Allen , Shouyin Zhang , Xianmin Tang
IPC: H01J37/34 , C23C14/35 , C23C14/54 , H01L21/768 , H01L21/285
Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.
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