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1.
公开(公告)号:US20180024443A1
公开(公告)日:2018-01-25
申请号:US15548407
申请日:2016-02-05
Applicant: ASML Netherlands B.V.
Inventor: Friso WITTEBROOD
IPC: G03F7/20
CPC classification number: G03F7/70466 , G03F1/70 , G03F7/0002 , H01L21/0337
Abstract: A functional device pattern is formed in a self-aligned multiple patterning process (e.g. SADP, SAQP). A first grid structure is formed on the substrate, the first grid structure including a plurality of elements in a first periodic arrangement. The first grid structure may be formed, for example, by a self-aligned pitch multiplication process. The first grid structure is then modified at specific locations in accordance with a cut mask, thereby to define the functional device pattern. In an intermediate step, a second grid structure is formed overlying the first grid structure. The second grid structure includes a plurality of elements in a second periodic arrangement. The elements of the second grid structure work in addition to the cut mask to constrain the locations at which the first grid structure is modified. Overlay and CD requirements of the cut mask can be relaxed.
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公开(公告)号:US20220121105A1
公开(公告)日:2022-04-21
申请号:US17426806
申请日:2020-01-02
Applicant: ASML NETHERLANDS B.V.
Inventor: Marie-Claire VAN LARE , Frank Jan TIMMERMANS , Friso WITTEBROOD , John Martin MCNAMARA , Jozef Maria FINDERS
IPC: G03F1/32
Abstract: An attenuated phase shift patterning device including a first component for reflecting radiation, and a second component for reflecting radiation with a different phase with respect to the radiation reflected from the first component, the second component covering at least a portion of the surface of the first component such that a pattern including at least one uncovered portion of the first component is formed for generating a patterned radiation beam in a lithographic apparatus in use, wherein the second component includes a material having a refractive index with a real part (n) being less than 0.95 and an imaginary part (k) being less than 0.04.
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