公开(公告)号：US20240004283A1

公开(公告)日：2024-01-04

申请号：US18227833

申请日：2023-07-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Maxim Aleksandrovich Nasalevich ,  Erik Achilles ABEGG ,  Nirupam BANERJEE ,  Michiel Alexander BLAUW ,  Derk Servatius Gertruda BROUNS ,  Paul JANSSEN ,  Matthias KRUIZINGA ,  Egbert LENDERINK ,  Nicolae MAXIM ,  Andrey NIKIPELOV ,  Arnoud Willem NOTENBOOM ,  Claudia PILIEGO ,  Mária PÉTER ,  Gijsbert RISPENS ,  Nadja SCHUH ,  Marcus Adrianus VAN DE KERKHOF ,  Willem Joan VAN DER ZANDE ,  Pieter-Jan VAN ZWOL ,  Antonius Willem VERBURG ,  Johannes Petrus Martinus Bernardus VERMEULEN ,  David Ferdinand VLES ,  Willem-Pieter VOORTHUIJZEN ,  Aleksandar Nikolov ZDRAVKOV

IPC: G03F1/62 ,  G03F7/00 ,  G03F1/82 ,  G02B5/20 ,  G02B5/28

CPC classification number: G03F1/62 ,  G03F7/70191 ,  G03F7/70983 ,  G03F1/82 ,  G03F7/70916 ,  G03F7/70958 ,  G03F7/70575 ,  G02B5/208 ,  G02B5/283

Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

公开(公告)号：US20190129299A1

公开(公告)日：2019-05-02

申请号：US16093537

申请日：2017-04-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Maxim Aleksandrovich NASALEVICH ,  Erik Achilles ABEGG ,  Nirupam BANERJEE ,  Michiel Alexander BLAUW ,  Derk Servatius Gertruda BROUNS ,  Paul JANSSEN ,  Matthias KRUIZINGA ,  Egbert LENDERINK ,  Nicolae MAXIM ,  Andrey NIKIPELOV ,  Arnoud Willem NOTENBOOM ,  Claudia PILIEGO ,  Mária PÉTER ,  Gijsber RISPENS ,  Nadja SCHUH ,  Marcus Adrianus VAN DE KERKHOF ,  Willem Joan VAN DER ZANDE ,  Pieter-Jan VAN ZWOL ,  Antonius Willem VERBURG ,  Johannes Petrus Martinus Bernardus VERMEULEN ,  David Ferdinand VLES ,  Willem-Pieter VOORTHUIJZEN ,  Aleksandar Nikolov ZDRAVICOV

IPC: G03F1/62 ,  G03F7/20 ,  G02B5/28

Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

公开(公告)号：US20160033875A1

公开(公告)日：2016-02-04

申请号：US14879852

申请日：2015-10-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Anthonius Martinus Cornelis Petrus DE JONG ,  Hans JANSEN ,  Martinus Hendrikus Antonius LEENDERS ,  Antonius Johannus VAN DER NET ,  Peter Franciscus WANTEN ,  Jacques Cor Johan VAN DER DONCK ,  Robert Douglas WATSO ,  Teunis Cornelis VAN DEN DOOL ,  Nadja SCHUH ,  Jan Willem CROMWIJK

IPC: G03F7/20

CPC classification number: G03F7/70341 ,  G03F7/70925

Abstract: An immersion lithographic apparatus is cleaned by use of a cleaning liquid consisting essentially of ultra-pure water and (a) a mixture of hydrogen peroxide and ozone, or (b) hydrogen peroxide at a concentration of up to 5%, or (c) ozone at a concentration of up to 50 ppm, or (d) oxygen at concentration of up to 10 ppm, or (e) any combination selected from (a)-(d).

Abstract translation: 或（c）过氧化氢和臭氧的混合物，或（b）浓度高达5％的过氧化氢，或（c） 浓度高达50ppm的臭氧，或（d）浓度高达10ppm的氧，或（e）选自（a） - （d）的任何组合。