公开(公告)号：US20140233031A1

公开(公告)日：2014-08-21

申请号：US14261879

申请日：2014-04-25

Applicant: ASML Netherlands B.V.

Inventor： Maurits VAN DER SCHAAR ,  Patric Warnaar ,  Kaustuve Bhattacharyya ,  Hendrik Jan Hidde Smilde ,  Michael Kubis

IPC: G01B11/14 ,  G03F7/20

CPC classification number: G03F9/7042 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70683 ,  H01L23/544 ,  H01L23/58 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

Abstract translation: 来自图案形成装置的图案通过光刻装置施加到基板。 应用模式包括产品功能和计量目标。 测量目标包括大目标和小目标，用于测量覆盖。 一些较小的目标分布在较大目标之间的位置，而其他小目标则放置在与大目标位置相同的位置。 通过比较在相同位置使用小目标和大目标测量的值，可以校正使用所有小目标测量的参数值以获得更高的精度。 大型目标主要位于划线范围内，而小目标则分布在产品区域内。