公开(公告)号：US20150295006A1

公开(公告)日：2015-10-15

申请号：US14554072

申请日：2014-11-26

Applicant: AU OPTRONICS CORP.

Inventor： Ching-Wen Chen ,  An-Thung Cho ,  Jiun-Jye Chang ,  Chun Chang

IPC: H01L27/146 ,  H01L29/66 ,  H01L31/0224 ,  H01L31/18 ,  H01L29/786 ,  H01L31/105

CPC classification number: H01L29/66969 ,  H01L29/7869 ,  H01L31/022466 ,  H01L31/105 ,  H01L31/1055 ,  H01L31/1884

Abstract: A light sensing device includes a substrate, a control unit and a light sensing unit. The control unit and the light sensing unit are disposed on the substrate. The control unit includes a gate electrode, a gate insulation layer, an oxide semiconductor pattern, a source electrode and a drain electrode. The gate insulation layer is disposed on the gate electrode, and the oxide semiconductor pattern is disposed on the gate insulation layer. The light sensing unit includes a bottom electrode, a light sensing diode and a top electrode. The light sensing diode is disposed on the bottom electrode, and the top electrode is disposed on the light sensing diode. The gate insulation layer partially covers the top electrode, and the gate insulation layer has a first opening partially exposing the bottom electrode. The drain electrode is electrically connected to the bottom electrode via the first opening.

Abstract translation: 光感测装置包括基板，控制单元和光感测单元。 控制单元和光感测单元设置在基板上。 控制单元包括栅电极，栅极绝缘层，氧化物半导体图案，源电极和漏电极。 栅极绝缘层设置在栅电极上，并且氧化物半导体图案设置在栅极绝缘层上。 光感测单元包括底部电极，感光二极管和顶部电极。 光检测二极管设置在底电极上，顶电极设置在感光二极管上。 栅极绝缘层部分地覆盖顶部电极，并且栅极绝缘层具有部分地暴露底部电极的第一开口。 漏电极经由第一开口电连接到底电极。

公开(公告)号：US09997636B2

公开(公告)日：2018-06-12

申请号：US15683031

申请日：2017-08-22

Applicant: AU OPTRONICS CORP.

Inventor： Ching-Wen Chen ,  An-Thung Cho

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/32 ,  H01L27/12 ,  H01L21/027 ,  H01L31/09 ,  H01L31/18 ,  H01L29/66

CPC classification number: H01L29/78651 ,  H01L21/0274 ,  H01L27/124 ,  H01L27/3227 ,  H01L29/66765 ,  H01L31/09 ,  H01L31/18

Abstract: An optical sensing device includes a thin film transistor disposed on a substrate, an optical sensor, a planar layer, and an organic light emitting diode. The optical sensor includes a metal electrode disposed on a gate dielectric layer of the thin film transistor and connecting to a drain electrode of the thin film transistor, an optical sensing layer disposed on the metal electrode, and a first transparent electrode disposed on the optical sensing layer. The planar layer covers at least a part of the thin film transistor and the optical sensor. The organic light emitting diode is disposed on the planar layer. The anode electrode and the cathode electrode of the organic light emitting diode are electrically coupled to a gate line and a data line respectively.

公开(公告)号：US20170352764A1

公开(公告)日：2017-12-07

申请号：US15683031

申请日：2017-08-22

Applicant: AU OPTRONICS CORP.

Inventor： Ching-Wen Chen ,  An-Thung Cho

IPC: H01L29/786 ,  H01L31/09 ,  H01L29/66 ,  H01L27/32 ,  H01L27/12 ,  H01L31/18 ,  H01L21/027

CPC classification number: H01L29/78651 ,  H01L21/0274 ,  H01L27/124 ,  H01L27/3227 ,  H01L29/66765 ,  H01L31/09 ,  H01L31/18

Abstract: An optical sensing device includes a thin film transistor disposed on a substrate, an optical sensor, a planar layer, and an organic light emitting diode. The optical sensor includes a metal electrode disposed on a gate dielectric layer of the thin film transistor and connecting to a drain electrode of the thin film transistor, an optical sensing layer disposed on the metal electrode, and a first transparent electrode disposed on the optical sensing layer. The planar layer covers at least a part of the thin film transistor and the optical sensor. The organic light emitting diode is disposed on the planar layer. The anode electrode and the cathode electrode of the organic light emitting diode are electrically coupled to a gate line and a data line respectively.