公开(公告)号：US11495557B2

公开(公告)日：2022-11-08

申请号：US16825713

申请日：2020-03-20

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Jhao-Cheng Chen ,  Huang-Hsien Chang ,  Wen-Long Lu ,  Shao Hsuan Chuang ,  Ching-Ju Chen ,  Tse-Chuan Chou

IPC: H01L23/00

Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.