公开(公告)号：US09196595B2

公开(公告)日：2015-11-24

申请号：US14192029

申请日：2014-02-27

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Kuo-Hua Chen ,  Tzu-Hua Lin ,  Kuan-Neng Chen ,  Yan-Pin Huang

IPC: H01L23/00 ,  H01L21/56 ,  H01L25/065 ,  H01L25/00 ,  H01L23/498 ,  H01L23/31

CPC classification number: H01L24/11 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13118 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13149 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16501 ,  H01L2224/73204 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8183 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

Abstract: The disclosure relates to a semiconductor bonding structure and process and a semiconductor chip. The semiconductor bonding structure includes a first pillar, a first interface, an intermediate area, a second interface and a second pillar in sequence. The first pillar, the second pillar and the intermediate area include a first metal. The first interface and the second interface include the first metal and an oxide of a second metal. The content percentage of the first metal in the first interface and the second interface is less than that of the first metal in the intermediate area.

Abstract translation: 本公开涉及半导体接合结构和工艺以及半导体芯片。 半导体接合结构依次包括第一柱，第一界面，中间区域，第二界面和第二柱。 第一支柱，第二支柱和中间区域包括第一金属。 第一界面和第二界面包括第一金属和第二金属的氧化物。 第一界面和第二界面中的第一金属的含量百分比小于中间区域中的第一金属的含量百分比。

公开(公告)号：US09496238B2

公开(公告)日：2016-11-15

申请号：US14622494

申请日：2015-02-13

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Min-Fong Shu ,  Yi-Hsiu Tseng ,  Kuan-Neng Chen ,  Shu-Chiao Kuo

IPC: H01L23/31 ,  H01L23/49 ,  H01L23/00 ,  H01L23/498

CPC classification number: H01L24/81 ,  H01L21/4853 ,  H01L21/563 ,  H01L23/13 ,  H01L23/3142 ,  H01L23/3185 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/564 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05623 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/1182 ,  H01L2224/13026 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13582 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13618 ,  H01L2224/13623 ,  H01L2224/13624 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13663 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13678 ,  H01L2224/13687 ,  H01L2224/1607 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/16501 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81096 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81385 ,  H01L2224/81395 ,  H01L2224/81409 ,  H01L2224/81411 ,  H01L2224/81418 ,  H01L2224/81423 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/81463 ,  H01L2224/81464 ,  H01L2224/81466 ,  H01L2224/81476 ,  H01L2224/81478 ,  H01L2224/81487 ,  H01L2224/81815 ,  H01L2224/8183 ,  H01L2224/81898 ,  H01L2224/83104 ,  H01L2224/83193 ,  H01L2224/92125 ,  H01L2924/00015 ,  H01L2924/15311 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/3511 ,  H01L2924/381 ,  H01L2224/8109 ,  H01L2924/00014 ,  H01L2924/01076 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/053

Abstract: A bonding structure includes a substrate having a top surface and including at least one bonding pad. Each bonding pad is disposed adjacent to the top surface of the substrate and has a sloped surface. A semiconductor element includes at least one pillar. Each pillar is bonded to a portion of the sloped surface of a corresponding bonding pad, and a gap is formed between a sidewall of the pillar and the sloped surface of the corresponding bonding pad.

Abstract translation: 接合结构包括具有顶表面并且包括至少一个接合焊盘的基板。 每个接合焊盘设置成与衬底的顶表面相邻并且具有倾斜的表面。 半导体元件包括至少一个支柱。 每个支柱结合到对应的焊盘的倾斜表面的一部分，并且在柱的侧壁和相应的焊盘的倾斜表面之间形成间隙。