Semiconductor device package and method of manufacturing the same

    公开(公告)号:US11329017B2

    公开(公告)日:2022-05-10

    申请号:US16862455

    申请日:2020-04-29

    Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first electronic component having an active surface and a backside surface opposite to the active surface and a first antenna layer disposed on the backside surface of the first electronic component. The semiconductor device package further includes a first dielectric layer covering the first antenna layer and a second antenna layer disposed over the first antenna layer. The second antenna layer is spaced apart from the first antenna layer by the first dielectric layer. A method of manufacturing a semiconductor device package is also disclosed.

    Semiconductor device package
    2.
    发明授权

    公开(公告)号:US12211765B2

    公开(公告)日:2025-01-28

    申请号:US18212160

    申请日:2023-06-20

    Inventor: Wei-Tung Chang

    Abstract: The present disclosure provides a semiconductor device package including a first device, a second device, and a spacer. The first device includes a substrate having a first dielectric constant. The second device includes a dielectric element, an antenna, and a reinforcing element. The dielectric element has a second dielectric constant less than the first dielectric constant. The antenna is at least partially within the dielectric element. The reinforcing element is disposed on the dielectric element, and the reinforcing element has a third dielectric constant greater than the first dielectric constant. The spacer is disposed between the first device and the second device and configured to define a distance between the first device and the second device.

    Electronic device package and method for manufacturing the same

    公开(公告)号:US11152315B2

    公开(公告)日:2021-10-19

    申请号:US16653644

    申请日:2019-10-15

    Abstract: An electronic device package includes a first conductive substrate, a second conductive substrate and a dielectric layer. The first conductive substrate has a first coefficient of thermal expansion (CTE). The second conductive substrate is disposed on an upper surface of the first conductive substrate and electrically connected to the first conductive substrate. The second conductive substrate has a second CTE. The dielectric layer is disposed on the upper surface of the first conductive substrate and disposed on at least one sidewall of the second conductive substrate. The dielectric layer has a third CTE. A difference between the first CTE and the second CTE is larger than a difference between the first CTE and the third CTE.

    Semiconductor device package
    6.
    发明授权

    公开(公告)号:US11682601B2

    公开(公告)日:2023-06-20

    申请号:US17239478

    申请日:2021-04-23

    Inventor: Wei-Tung Chang

    Abstract: The present disclosure provides a semiconductor device package including a first device, a second device, and a spacer. The first device includes a substrate having a first dielectric constant. The second device includes a dielectric element, an antenna, and a reinforcing element. The dielectric element has a second dielectric constant less than the first dielectric constant. The antenna is at least partially within the dielectric element. The reinforcing element is disposed on the dielectric element, and the reinforcing element has a third dielectric constant greater than the first dielectric constant. The spacer is disposed between the first device and the second device and configured to define a distance between the first device and the second device.

Patent Agency Ranking