公开(公告)号：US20130137250A1

公开(公告)日：2013-05-30

申请号：US13726826

申请日：2012-12-26

Applicant: Advanced Technology Materials, Inc.

Inventor： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

IPC: H01L21/265

CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/082 ,  H01L21/26513 ,  H01L21/2658

Abstract: Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

Abstract translation: 使用比三氟化硼更容易裂解的含氟含硼掺杂剂物质注入含硼离子的方法。 一种制造半导体器件的方法，包括使用比三氟化硼更容易切割的氟化含硼掺杂物物种注入含硼离子。 还公开了用于提供硼氢化物前体的体系，以及形成硼氢化物前体的方法和用于供应硼氢化物前体的方法。 在本发明的一个实施方案中，为了制造半导体产品例如集成电路，产生用于簇硼注入的硼氢化物前体。