公开(公告)号：US20230295461A1

公开(公告)日：2023-09-21

申请号：US18019003

申请日：2021-08-03

Applicant: Agency for Science, Technology and Research ,  University College London

Inventor： Yee Fun Lim ,  Gregory Kia Liang Goh ,  John Chapman-Fortune

IPC: C09D183/02 ,  C08G77/02 ,  C09D1/04

CPC classification number: C09D183/02 ,  C08G77/02 ,  C09D1/04

Abstract: A method of producing a silica-based superhydrophilic film. A coating formulation is provided, where the coating formulation includes an alkali metal silicate having a substantial portion of water removed therefrom, where the alkali metal silicate has a formula of M2O·nSiO2, and where M represents an alkali metal and n is a positive real number greater than zero. Furthermore, the coating formulation and an alcohol including a curing agent are mixed, where the curing agent includes an acid or an alkaline earth metal halide. Additionally, the coating formulation is dried to form the silica-based superhydrophilic film. Furthermore, a silica-based superhydrophilic film is produced according to such a method, where the silica-based superhydrophilic film includes an amine stabilizer.

公开(公告)号：US20240301550A1

公开(公告)日：2024-09-12

申请号：US18657569

申请日：2024-05-07

Applicant: Agency for Science, Technology and Research

Inventor： Swee Liang Wong ,  Yee Fun Lim ,  Dongzhi Chi

IPC: C23C16/30 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455

CPC classification number: C23C16/305 ,  C23C16/4401 ,  C23C16/4481 ,  C23C16/455

Abstract: A method of forming a transition metal dichalcogenide layer on a substrate is provided. The method may include providing a transition metal oxide, a chalcogen source, a non-gaseous chalcogen scavenger, and a substrate, wherein the substrate is disposed downstream of the transition metal oxide and the chalcogen source, and wherein the non-gaseous chalcogen scavenger is disposed in proximity to the transition metal oxide; generating vapors of the transition metal oxide and vapors of the chalcogen source, wherein the non-gaseous chalcogen scavenger reacts preferentially with the vapors of the chalcogen source; disposing the vapors generated from the transition metal oxide and the chalcogen source on the substrate; and reacting the vapors of the transition metal oxide and the chalcogen source on the substrate to obtain the transition metal dichalcogenide layer on the substrate. An arrangement for forming a transition metal dichalcogenide layer on a substrate is also provided.

公开(公告)号：US09423295B2

公开(公告)日：2016-08-23

申请号：US14261269

申请日：2014-04-24

Applicant: Agency for Science, Technology and Research

Inventor： Szu Cheng Lai ,  Kui Yao ,  Yi Fan Chen ,  Yee Fun Lim

IPC: G01J1/42 ,  H01L49/00

CPC classification number: G01J1/42 ,  G01J1/429 ,  H01L49/00

Abstract: According to one aspect of the invention, there is provided a photo-sensor comprising: an optically transparent substrate; an electrode pair; and a photoactive film with electrical polarization located between the optically transparent substrate and the electrode pair, wherein the optically transparent substrate is configured to transmit incident radiation received by the optically transparent substrate to the photoactive film and wherein the electrode pair is configured to receive charge carriers generated by the photoactive film in response to the transmitted incident radiation.

Abstract translation: 根据本发明的一个方面，提供一种光传感器，包括：光学透明基板; 电极对; 以及具有位于所述光学透明基板和所述电极对之间的具有电极化的光敏膜，其中所述光学透明基板被配置为将由所述光学透明基板接收的入射辐射透射到所述光敏膜，并且其中所述电极对被配置为接收电荷载体 由光敏膜响应于所发射的入射辐射而产生。

公开(公告)号：US12006569B2

公开(公告)日：2024-06-11

申请号：US17437013

申请日：2020-03-11

Applicant: Agency for Science, Technology and Research

Inventor： Swee Liang Wong ,  Yee Fun Lim ,  Dongzhi Chi

IPC: C23C16/455 ,  C23C16/30 ,  C23C16/44 ,  C23C16/448

CPC classification number: C23C16/305 ,  C23C16/4401 ,  C23C16/4481 ,  C23C16/455

Abstract: A method of forming a transition metal dichalcogenide layer on a substrate is provided. The method may include providing a transition metal oxide, a chalcogen source, a non-gaseous chalcogen scavenger, and a substrate, wherein the substrate is disposed downstream of the transition metal oxide and the chalcogen source, and wherein the non-gaseous chalcogen scavenger is disposed in proximity to the transition metal oxide; generating vapors of the transition metal oxide and vapors of the chalcogen source, wherein the non-gaseous chalcogen scavenger reacts preferentially with the vapors of the chalcogen source; disposing the vapors generated from the transition metal oxide and the chalcogen source on the substrate; and reacting the vapors of the transition metal oxide and the chalcogen source on the substrate to obtain the transition metal dichalcogenide layer on the substrate. In one embodiment, the transition metal oxide is molybdenum trioxide (MoO3), the chalcogen source is sulfur, the non-gaseous chalcogen scavenger is nickel and the transition metal dichalcogenide is molybdenum disulfide (MoS2). An arrangement for forming a transition metal dichalcogenide layer on a substrate is also provided.

公开(公告)号：US20220178018A1

公开(公告)日：2022-06-09

申请号：US17437013

申请日：2020-03-11

Applicant: Agency for Science, Technology and Research

Inventor： Swee Liang Wong ,  Yee Fun Lim ,  Dongzhi Chi

IPC: C23C16/30 ,  C23C16/448 ,  C23C16/44 ,  C23C16/455

Abstract: A method of forming a transition metal dichalcogenide layer on a substrate is provided. The method may include providing a transition metal oxide, a chalcogen source, a non-gaseous chalcogen scavenger, and a substrate, wherein the substrate is disposed downstream of the transition metal oxide and the chalcogen source, and wherein the non-gaseous chalcogen scavenger is disposed in proximity to the transition metal oxide; generating vapors of the transition metal oxide and vapors of the chalcogen source, wherein the non-gaseous chalcogen scavenger reacts preferentially with the vapors of the chalcogen source; disposing the vapors generated from the transition metal oxide and the chalcogen source on the substrate; and reacting the vapors of the transition metal oxide and the chalcogen source on the substrate to obtain the transition metal dichalcogenide layer on the substrate. In one embodiment, the transition metal oxide is molybdenum trioxide (MoO3), the chalcogen source is sulfur, the non-gaseous chalcogen scavenger is nickel and the transition metal dichalcogenide is molybdenum disulfide (MoS2). An arrangement for forming a transition metal dichalcogenide layer on a substrate is also provided.

公开(公告)号：US20140319317A1

公开(公告)日：2014-10-30

申请号：US14261269

申请日：2014-04-24

Applicant: Agency for Science, Technology and Research

Inventor： Szu Cheng Lai ,  Kui Yao ,  Yi Fan Chen ,  Yee Fun Lim

IPC: G01J1/42

CPC classification number: G01J1/42 ,  G01J1/429 ,  H01L49/00

Abstract: According to one aspect of the invention, there is provided a photo-sensor comprising: an optically transparent substrate; an electrode pair; and a photoactive film with electrical polarization located between the optically transparent substrate and the electrode pair, wherein the optically transparent substrate is configured to transmit incident radiation received by the optically transparent substrate to the photoactive film and wherein the electrode pair is configured to receive charge carriers generated by the photoactive film in response to the transmitted incident radiation.

Abstract translation: 根据本发明的一个方面，提供一种光传感器，包括：光学透明基板; 电极对; 以及具有位于所述光学透明基板和所述电极对之间的具有电极化的光敏膜，其中所述光学透明基板被配置为将由所述光学透明基板接收的入射辐射透射到所述光敏膜，并且其中所述电极对被配置为接收电荷载体 由光敏膜响应于所发射的入射辐射而产生。