Abstract:
An integrated tunable laser structure comprising a substrate made of semiconductor material, the substrate (1; FIG. 2) comprising a first (2), a second (3), and a third (4) section. The first section (2) provides a low-selective interferometric filtering together with an amplification of a light wave resonating in the laser structure. The second section (3) provides continuous fine-tuning and phase adjustment of the light wave, and the third section (4) provides a wavelength selective reflection of the light wave. Each section allows current injection, wherein a current into the first section (2) causes a wavelength shift of the low-selective interferometric filtering, a current into the second section (3) causes a wavelength shift of resonator modes, and a current into the third section (4) causes a wavelength shift of the wavelength selective reflection.
Abstract:
The invention relates to a method of tuning a laser, comprising the steps of: providing a laser beam to an external cavity, the laser beam traveling through material along a path between a cavity end element and a tuning element, the path having an optical path length, selecting at least one mode of the laser by introducing a dispersion element in the path of the laser, rotating the tuning element about a pivot axis theoretically defined by the intersection of the surface planes of the cavity end element, the dispersion element and the tuning element to tune the laser, changing the optical path length of the path in order to at least partly compensate a shift between the real position of the pivot axis and the theoretically defined position.
Abstract:
An apparatus for tuning a laser comprises an external cavity (2) for receiving a laser beam (4), the laser beam (4) traveling through material along a path (4) between a cavity end element (6) and a tuning element (8), the path (4) having an optical path length. A dispersion element (10) is introduced in the path (4) of the laser for selecting at least one mode of the laser, and a changing element is provided for changing the optical path length of the path (4). The changing element comprises a liquid crystal (32, 42) in at least a part of the path (4), the liquid crystal (32, 42) being sensitive in a characteristic property. The changing element is adapted for changing the characteristic property of the liquid crystal (32, 42) in a way which influences the optical path length of the path (4) to stabilize a mode of the laser.
Abstract:
An optical arrangement (10, 30, 40) for direction dependent coupling out of light comprises a first (10) and a second (40) polarization converter each for converting the state of polarization of light received in a predetermined way. A polarization dependent coupling device (30) is adapted for coupling out a portion of the light received, whereby the ratio of the coupled out portion substantially depends on the state of polarization of the light received. The polarization dependent coupling device (30) is arranged between the first (10) and the second (40) polarization converters, and the optical arrangement (10, 30, 40) receives from different sides light beams propagating in different directions. The characteristics of the first (10) and the second polarization converters (40) are adapted that the polarization dependent coupling device (30) receives light beams propagating with different states of polarization in the different directions.