公开(公告)号：US10535536B2

公开(公告)日：2020-01-14

申请号：US16292909

申请日：2019-03-05

Applicant: Amkor Technology, Inc.

Inventor： Jin Young Kim ,  Doo Hyun Park ,  Seung Jae Lee

IPC: H01L21/48 ,  H01L23/00 ,  H01L23/498 ,  H01L23/48 ,  H01L21/56 ,  H01L23/16 ,  H01L23/31 ,  H01L25/10

Abstract: A wafer level fan out package includes a semiconductor die having a first surface, a second surface, and a third surface. A stiffener is disposed on the third surface of the semiconductor die. A conductive via passes through the stiffener. First and second electrically conductive patterns electrically connected to the conductive via are disposed on the first and second surfaces of the semiconductor die and stiffener. Solder balls are electrically connected to the first or second electrically conductive patterns.

公开(公告)号：US09831282B2

公开(公告)日：2017-11-28

申请号：US15248687

申请日：2016-08-26

Applicant: Amkor Technology, Inc.

Inventor： Jin Young Kim ,  No Sun Park ,  Yoon Joo Kim ,  Seung Jae Lee ,  Se Woong Cha ,  Sung Kyu Kim ,  Ju Hoon Yoon

IPC: H01L29/06 ,  H01L27/146 ,  H01L23/00 ,  H01L23/498 ,  H01L23/528 ,  G06K9/00

CPC classification number: H01L27/14636 ,  G06K9/00006 ,  H01L21/568 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/5286 ,  H01L24/19 ,  H01L24/20 ,  H01L27/14618 ,  H01L27/14678 ,  H01L2224/04105 ,  H01L2224/211 ,  H01L2224/214 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00

Abstract: Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 μm or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

公开(公告)号：US20160197032A1

公开(公告)日：2016-07-07

申请号：US15069895

申请日：2016-03-14

Applicant: Amkor Technology, Inc.

Inventor： Jong Sik Paek ,  Jin Young Kim ,  YoonJoo Kim ,  Jin Han Kim ,  SeungJae Lee ,  Se Woong Cha ,  SungKyu Kim ,  Jae Hun Bae ,  Dong Jin Kim ,  Doo Hyun Park

IPC: H01L23/498 ,  H01L23/31

CPC classification number: H01L23/49838 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3185 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02317 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/12105 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2924/12042 ,  H01L2924/18162 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2924/01079 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01047 ,  H01L2924/01029

Abstract: A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include a semiconductor die having a first surface, a second surface opposite to the first surface, and side surfaces between the first and second surfaces; an encapsulant encapsulating the side surfaces of the semiconductor die; a contact pad on the first surface of the semiconductor die; and a redistribution layer coupled to the contact pad The redistribution layer may include a linear portion and a circular pad, and a hemispherical conductive bump on the circular pad may include a protruding part extending toward the linear portion and having a radius less than the hemispherical conductive bump. The second surface of the semiconductor die may be coplanar with a surface of the encapsulant. A dielectric layer may cover a portion of the first surface of the semiconductor die and a first surface of the encapsulant.

Abstract translation: 公开了一种在部分封装上具有再分配层的半导体器件，并且可以包括具有第一表面，与第一表面相对的第二表面以及第一和第二表面之间的侧表面的半导体管芯; 封装半导体管芯的侧表面的密封剂; 在所述半导体管芯的第一表面上的接触焊盘; 以及耦合到接触焊盘的再分布层。再分配层可以包括直线部分和圆形焊盘，并且圆形焊盘上的半球形导电凸块可以包括朝向线性部分延伸并且具有小于半球形导电性的半径的突出部分 磕碰。 半导体管芯的第二表面可以与密封剂的表面共面。 电介质层可以覆盖半导体管芯的第一表面的一部分和密封剂的第一表面。

公开(公告)号：US09214434B1

公开(公告)日：2015-12-15

申请号：US14017802

申请日：2013-09-04

Applicant: Amkor Technology, Inc.

Inventor： Jin Young Kim ,  Doo Hyun Park ,  Seung Jae Lee

IPC: H01L23/48 ,  H01L23/28 ,  H01L23/00

CPC classification number: H01L24/02 ,  H01L23/16 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/19 ,  H01L24/20 ,  H01L24/73 ,  H01L24/81 ,  H01L25/105 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/12105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A wafer level fan out package includes a semiconductor die having a first surface, a second surface, and a third surface. A stiffener is disposed on the third surface of the semiconductor die. A conductive via passes through the stiffener. First and second electrically conductive patterns electrically connected to the conductive via are disposed on the first and second surfaces of the semiconductor die and stiffener. Solder balls are electrically connected to the first or second electrically conductive patterns.

Abstract translation: 晶片级风扇输出封装包括具有第一表面，第二表面和第三表面的半导体管芯。 加强件设置在半导体管芯的第三表面上。 导电通孔穿过加强件。 电连接到导电通孔的第一和第二导电图案设置在半导体管芯和加强件的第一和第二表面上。 焊球电连接到第一或第二导电图案。

公开(公告)号：US20150340399A1

公开(公告)日：2015-11-26

申请号：US14817477

申请日：2015-08-04

Applicant: Amkor Technology, Inc.

Inventor： Jin Young Kim ,  No Sun Park ,  Yoon Joo Kim ,  Seung Jae Lee ,  Se Woong Cha ,  Sung Kyu Kim ,  Ju Hoon Yoon

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  G06K9/00006 ,  H01L21/568 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/5286 ,  H01L24/19 ,  H01L24/20 ,  H01L27/14618 ,  H01L27/14678 ,  H01L2224/04105 ,  H01L2224/211 ,  H01L2224/214 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00

Abstract: Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 μm or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

Abstract translation: 本公开的各个方面提供了半导体器件，例如包括指纹传感器及其制造方法。 本公开的各个方面可以例如提供不包括单独的印刷电路板（PCB）的厚度为500μm或更小的超薄指纹传感器及其制造方法。

公开(公告)号：US20150221601A1

公开(公告)日：2015-08-06

申请号：US14449654

申请日：2014-08-01

Applicant: Amkor Technology, Inc.

Inventor： Jin Young Kim ,  Ji Young Chung ,  Doo Hyun Park ,  Choon Heung Lee

IPC: H01L23/00 ,  H01L23/31 ,  H01L21/56

Abstract: A semiconductor device with redistribution layers formed utilizing dummy substrates is disclosed and may include forming a first redistribution layer on a first dummy substrate, forming a second redistribution layer on a second dummy substrate, electrically connecting a semiconductor die to the first redistribution layer, electrically connecting the first redistribution layer to the second redistribution layer, and removing the dummy substrates. The first redistribution layer may be electrically connected to the second redistribution layer utilizing a conductive pillar. An encapsulant material may be formed between the first and second redistribution layers. Side portions of one of the first and second redistribution layers may be covered with encapsulant. A surface of the semiconductor die may be in contact with the second redistribution layer. The dummy substrates may be in panel form. One of the dummy substrates may be in panel form and the other in unit form.

Abstract translation: 公开了一种使用虚拟衬底形成的具有再分配层的半导体器件，其可以包括在第一虚拟衬底上形成第一再分配层，在第二虚设衬底上形成第二再分布层，将半导体管芯电连接到第一再分配层，电连接 第一再分配层到第二再分配层，并且去除虚设基板。 第一再分布层可以利用导电柱电连接到第二再分配层。 可以在第一和第二再分配层之间形成密封剂材料。 第一和第二再分布层之一的侧面部分可以用密封剂覆盖。 半导体管芯的表面可以与第二再分配层接触。 虚拟基板可以是面板形式。 虚拟基板中的一个可以是面板形式，另一个是单元形式。

公开(公告)号：US10199322B2

公开(公告)日：2019-02-05

申请号：US15812202

申请日：2017-11-14

Applicant: Amkor Technology, Inc.

Inventor： Jong Sik Paek ,  Jin Young Kim ,  YoonJoo Kim ,  Jin Han Kim ,  SeungJae Lee ,  Se Woong Cha ,  SungKyu Kim ,  Jae Hun Bae ,  Dong Jin Kim ,  Doo Hyun Park

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56

Abstract: A semiconductor device with a redistribution structure on partial encapsulation is disclosed and may include an electronic device having a top surface, a bottom surface, and side surfaces between the top and bottom surfaces of the electronic device. An encapsulant may encapsulate the side surfaces of the electronic device, a contact pad may be on the top surface of the electronic device, and a redistribution structure may be coupled to the contact pad. The redistribution structure may include a linear portion and a bump pad, and a conductive bump on the bump pad may include a main bump and a protruding part extending toward the linear portion, where the protruding part may be smaller than the main bump.

公开(公告)号：US20170271315A1

公开(公告)日：2017-09-21

申请号：US15490091

申请日：2017-04-18

Applicant: Amkor Technology, Inc.

Inventor： Jin Young Kim ,  Doo Hyun Park ,  Ju Hoon Yoon ,  Seong Min Seo ,  Glenn Rinne ,  Choon Heung Lee

IPC: H01L25/00 ,  H01L25/065 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L25/50 ,  H01L21/568 ,  H01L23/3128 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05571 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16237 ,  H01L2224/81005 ,  H01L2225/06524 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/15311

Abstract: Provided are a semiconductor device using, for example, an epoxy molding compound (EMC) wafer support system and a fabricating method thereof, which can, for example, adjust a thickness of the overall package in a final stage of completing the device while shortening a fabricating process and considerably reducing the fabrication cost. An example semiconductor device may comprise a first semiconductor die that comprises a bond pad and a through silicon via (TSV) connected to the bond pad; an interposer comprising a redistribution layer connected to the bond pad or the TSV and formed on the first semiconductor die, a second semiconductor die connected to the redistribution layer of the interposer and positioned on the interposer; an encapsulation unit encapsulating the second semiconductor die, and a solder ball connected to the bond pad or the TSV of the first semiconductor die.

公开(公告)号：US09627368B2

公开(公告)日：2017-04-18

申请号：US14083917

申请日：2013-11-19

Applicant: Amkor Technology, Inc.

Inventor： Jin Young Kim ,  Doo Hyun Park ,  Ju Hoon Yoon ,  Seong Min Seo ,  Glenn Rinne ,  Choon Heung Lee

IPC: H01L21/00 ,  H01L25/00 ,  H01L25/065 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L25/50 ,  H01L21/568 ,  H01L23/3128 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05571 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16237 ,  H01L2224/81005 ,  H01L2225/06524 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/15311

Abstract: Provided are a semiconductor device using, for example, an epoxy molding compound (EMC) wafer support system and a fabricating method thereof, which can, for example, adjust a thickness of the overall package in a final stage of completing the device while shortening a fabricating process and considerably reducing the fabrication cost. An example semiconductor device may comprise a first semiconductor die that comprises a bond pad and a through silicon via (TSV) connected to the bond pad; an interposer comprising a redistribution layer connected to the bond pad or the TSV and formed on the first semiconductor die, a second semiconductor die connected to the redistribution layer of the interposer and positioned on the interposer; an encapsulation unit encapsulating the second semiconductor die, and a solder ball connected to the bond pad or the TSV of the first semiconductor die.

公开(公告)号：US20200335461A1

公开(公告)日：2020-10-22

申请号：US16921522

申请日：2020-07-06

Applicant: Amkor Technology, Inc.

Inventor： Jin Young Kim ,  Ji Young Chung ,  Doo Hyun Park ,  Choon Heung Lee

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L25/10 ,  H01L21/683

Abstract: A semiconductor device with redistribution layers formed utilizing dummy substrates is disclosed and may include forming a first redistribution layer on a first dummy substrate, forming a second redistribution layer on a second dummy substrate, electrically connecting a semiconductor die to the first redistribution layer, electrically connecting the first redistribution layer to the second redistribution layer, and removing the dummy substrates. The first redistribution layer may be electrically connected to the second redistribution layer utilizing a conductive pillar. An encapsulant material may be formed between the first and second redistribution layers. Side portions of one of the first and second redistribution layers may be covered with encapsulant. A surface of the semiconductor die may be in contact with the second redistribution layer. The dummy substrates may be in panel form. One of the dummy substrates may be in panel form and the other in unit form.