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公开(公告)号：US09923060B2
公开(公告)日：2018-03-20
申请号：US15165122
申请日：2016-05-26
Applicant: Analog Devices, Inc.
Inventor： Shrenik Deliwala , James Fiorenza , Donghyun Jin
IPC: H01L29/20 , H01L21/02 , H01L21/322 , H01L21/324 , H01L21/205 , H01L21/268 , H01L29/15 , H01L29/205 , H01L29/778
CPC classification number: H01L29/155 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02686 , H01L21/3221 , H01L21/324 , H01L29/2003 , H01L29/205 , H01L29/7787
Abstract: A method cold-melts a high conductivity region between a high-resistivity silicon substrate and a gallium-nitride layer to form a trap rich region that substantially immobilizes charge carriers in that region. Such a process should substantially mitigate the parasitic impact of that region on circuits formed at least in part by the gallium-nitride layer.
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Patent Agency Ranking
公开(公告)号：US20210194451A1
公开(公告)日：2021-06-24
申请号：US17134959
申请日：2020-12-28
Applicant: Analog Devices, Inc.
Inventor： Song Lin , Mir A. Faiz , Xudong Wang , Donghyun Jin , Bin Hou
Abstract: Wideband baluns with enhanced amplitude and phase balance are provided. The wideband balun includes a first transmission line connected between a first port and a third port, and a second transmission line connected between a second port and a fourth port, and a third transmission line connected between the third port and a reference voltage, such as ground. To enhance phase and/or amplitude balance of the wideband balun, the wideband balun further includes a compensation structure operable to provide at least one of capacitive compensation or inductive compensation to balance the wideband balun. For example, in certain implementations, the compensation structure includes at least one of (i) a capacitor connected between the first port and the second port or (ii) a fourth transmission line connected between the first transmission line and the third port.
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公开(公告)号：US20200220516A1
公开(公告)日：2020-07-09
申请号：US16380212
申请日：2019-04-10
Applicant: Analog Devices, Inc.
Inventor： Song Lin , Mir A. Faiz , Xudong Wang , Donghyun Jin , Bin Hou
Abstract: Wideband baluns with enhanced amplitude and phase balance are provided. The wideband balun includes a first transmission line connected between a first port and a third port, and a second transmission line connected between a second port and a fourth port, and a third transmission line connected between the third port and a reference voltage, such as ground. To enhance phase and/or amplitude balance of the wideband balun, the wideband balun further includes a compensation structure operable to provide at least one of capacitive compensation or inductive compensation to balance the wideband balun. For example, in certain implementations, the compensation structure includes at least one of (i) a capacitor connected between the first port and the second port or (ii) a fourth transmission line connected between the first transmission line and the third port.
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公开(公告)号：US11381216B2
公开(公告)日：2022-07-05
申请号：US17134959
申请日：2020-12-28
Applicant: Analog Devices, Inc.
Inventor： Song Lin , Mir A. Faiz , Xudong Wang , Donghyun Jin , Bin Hou
Abstract: Wideband baluns with enhanced amplitude and phase balance are provided. The wideband balun includes a first transmission line connected between a first port and a third port, and a second transmission line connected between a second port and a fourth port, and a third transmission line connected between the third port and a reference voltage, such as ground. To enhance phase and/or amplitude balance of the wideband balun, the wideband balun further includes a compensation structure operable to provide at least one of capacitive compensation or inductive compensation to balance the wideband balun. For example, in certain implementations, the compensation structure includes at least one of (i) a capacitor connected between the first port and the second port or (ii) a fourth transmission line connected between the first transmission line and the third port.
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公开(公告)号：US10911016B2
公开(公告)日：2021-02-02
申请号：US16380212
申请日：2019-04-10
Applicant: Analog Devices, Inc.
Inventor： Song Lin , Mir A. Faiz , Xudong Wang , Donghyun Jin , Bin Hou
Abstract: Wideband baluns with enhanced amplitude and phase balance are provided. The wideband balun includes a first transmission line connected between a first port and a third port, and a second transmission line connected between a second port and a fourth port, and a third transmission line connected between the third port and a reference voltage, such as ground. To enhance phase and/or amplitude balance of the wideband balun, the wideband balun further includes a compensation structure operable to provide at least one of capacitive compensation or inductive compensation to balance the wideband balun. For example, in certain implementations, the compensation structure includes at least one of (i) a capacitor connected between the first port and the second port or (ii) a fourth transmission line connected between the first transmission line and the third port.
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公开(公告)号：US20160351666A1
公开(公告)日：2016-12-01
申请号：US15165122
申请日：2016-05-26
Applicant: Analog Devices, Inc.
Inventor： Shrenik Deliwala , James Fiorenza , Donghyun Jin
IPC: H01L29/15 , H01L29/205 , H01L21/02 , H01L29/20
CPC classification number: H01L29/155 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02686 , H01L21/3221 , H01L21/324 , H01L29/2003 , H01L29/205 , H01L29/7787
Abstract: A method cold-melts a high conductivity region between a high-resistivity silicon substrate and a gallium-nitride layer to form a trap rich region that substantially immobilizes charge carriers in that region. Such a process should substantially mitigate the parasitic impact of that region on circuits formed at least in part by the gallium-nitride layer.
Abstract translation: 一种方法在高电阻率硅衬底和氮化镓层之间冷熔融高导电率区域，以形成基本上固定该区域中的电荷载流子的富集阱区域。 这种过程应该基本上减轻该区域对至少部分由氮化镓层形成的电路的寄生冲击。
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