MOLDING COMPOUND LAYERS IN SEMICONDUCTOR PACKAGES

    公开(公告)号:US20250014960A1

    公开(公告)日:2025-01-09

    申请号:US18348934

    申请日:2023-07-07

    Applicant: Apple Inc.

    Abstract: Various embodiments of an integrated circuit (IC) die package are disclosed. An IC die package includes an IC die, an interposer structure electrically connected to the IC die, a first bonding structure, a second bonding structure, and a molding compound layer. The first bonding structure includes a first dielectric layer disposed on the IC die and a first conductive plug disposed in the first dielectric layer. The second bonding structure includes a second dielectric layer disposed on the interposer structure and a second conductive plug disposed in the second dielectric layer. The molding compound layer includes a mold region and a mold cavity.

    BONDING STRUCTURES IN SEMICONDUCTOR PACKAGES

    公开(公告)号:US20250015027A1

    公开(公告)日:2025-01-09

    申请号:US18348925

    申请日:2023-07-07

    Applicant: Apple Inc.

    Abstract: Various embodiments of an integrated circuit (IC) die package are disclosed. An IC die package includes an IC die, an interposer structure electrically connected to the IC die, a first bonding structure, and a second bonding structure. The first bonding structure includes a first dielectric layer disposed on the IC die and also includes a first conductive pad having an embedded portion disposed in the first dielectric layer and an anchor portion extending over a top surface of the first dielectric layer. The second bonding structure includes a second dielectric layer disposed on the interposer structure, a second conductive pad disposed in the second dielectric layer, and an anchor layer surrounding the anchor portion.

    FRAME STRUCTURES IN SEMICONDUCTOR PACKAGES

    公开(公告)号:US20250112176A1

    公开(公告)日:2025-04-03

    申请号:US18530291

    申请日:2023-12-06

    Applicant: Apple Inc.

    Abstract: Various embodiments of an integrated circuit (IC) die package are disclosed. An IC die package includes an IC die, an interposer die electrically connected to the IC die, a first bonding structure disposed on the IC die, a second bonding structure bonded to the first bonding structure, a molding compound layer disposed on the second bonding structure and a frame structure disposed on the second bonding structure and surrounding the IC die.

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