公开(公告)号：US20190326115A1

公开(公告)日：2019-10-24

申请号：US16232609

申请日：2018-12-26

Applicant: Applied Materials, Inc.

Inventor： Bo Zheng ,  Avgerinos V. Gelatos ,  Anshul Vyas ,  Raymond Hoiman Hung

IPC: H01L21/02 ,  C23C16/02 ,  H01L21/67 ,  C23C16/48 ,  C23C16/44

Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.

公开(公告)号：US10163630B2

公开(公告)日：2018-12-25

申请号：US15674606

申请日：2017-08-11

Applicant: Applied Materials, Inc.

Inventor： Bo Zheng ,  Avgerinos V. Gelatos ,  Anshul Vyas ,  Raymond Hoiman Hung

IPC: H01L21/205 ,  C23C16/02 ,  H01L21/02 ,  C23C16/44 ,  C23C16/48 ,  H01L21/67

Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.

公开(公告)号：US09735009B2

公开(公告)日：2017-08-15

申请号：US14846215

申请日：2015-09-04

Applicant: Applied Materials, Inc.

Inventor： Bo Zheng ,  Avgerinos V. Gelatos ,  Anshul Vyas ,  Raymond Hoiman Hung

IPC: H01L21/20 ,  H01L21/3065 ,  H01L21/02 ,  C23C16/02 ,  C23C16/44 ,  C23C16/48 ,  H01L21/67

CPC classification number: H01L21/02661 ,  C23C16/0245 ,  C23C16/4405 ,  C23C16/481 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/67207

Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.