公开(公告)号：US20230357929A1

公开(公告)日：2023-11-09

申请号：US17862138

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Zubin HUANG ,  Jallepally RAVI ,  Cheng CHENG ,  Peiqi WANG ,  Kai WU

IPC: C23C16/458 ,  H01L21/687 ,  C23C16/46 ,  C23C16/455

CPC classification number: C23C16/4585 ,  H01L21/68721 ,  C23C16/46 ,  C23C16/45565

Abstract: A shadow ring for a processing chamber, such as a semiconductor processing chamber, is an annular member including a body with a radially inwardly projecting lip. The shadow ring includes a feature that mitigates heat transfer between the lip and the rest of the body. In one example, the feature includes a plurality of apertures, each aperture extending from an upper opening at an upper surface of the shadow ring to a corresponding lower opening at a lower surface of the shadow ring. A neck between adjacent apertures creates a bottleneck that hinders conductive heat transfer.

公开(公告)号：US20240368754A1

公开(公告)日：2024-11-07

申请号：US18773309

申请日：2024-07-15

Applicant: Applied Materials, Inc.

Inventor： Peiqi WANG ,  Cheng CHENG ,  Kai WU ,  Insu HA ,  Sang Jin LEE

IPC: C23C16/38 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56

Abstract: A structure of a substrate is provided including a tungsten-containing layer including a nucleation layer and a fill layer. The nucleation layer is disposed along sidewalls of the opening. The nucleation layer includes boron and tungsten. The fill layer is disposed over the nucleation layer within the opening. The tungsten-containing layer includes a resistivity of about 16 μΩ·cm or less. The tungsten-containing layer has a thickness of about 200 Å to about 600 Å. The tungsten-containing layer thickness is half a width of the tungsten-containing layer disposed within the opening between opposing sidewall portions of the opening.

公开(公告)号：US20240258109A1

公开(公告)日：2024-08-01

申请号：US18532381

申请日：2023-12-07

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Min-Han LEE ,  Yang LI ,  Cheng CHENG ,  Zhixiu LIANG

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/14 ,  C23C16/34

CPC classification number: H01L21/28568 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/34

Abstract: A method of forming a structure on a substrate includes forming an adhesion layer on a substrate. The method further includes forming a tungsten containing layer in-situ with the adhesion layer. The tungsten containing layer is formed by a one-time soak process including soaking the substrate once, and only once, in a first gas, purging the first gas, and soaking the substrate once, and only once, in a second gas. The method further includes removing the tungsten containing layer from the adhesion layer.