公开(公告)号：US20190172714A1

公开(公告)日：2019-06-06

申请号：US16188514

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Sarah BOBEK ,  Prashant KUMAR KULSHRESHTHA ,  Rajesh PRASAD ,  Kwangduk Douglas LEE ,  Harry WHITESELL ,  Hidetaka OSHIO ,  Dong Hyung LEE ,  Deven Matthew Raj MITTAL

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/311

Abstract: Implementations described herein generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of amorphous carbon films on a substrate. In one implementation, a method of forming an amorphous carbon film is provided. The method comprises depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further comprises implanting a dopant or inert species into the amorphous carbon film in a second processing region. The dopant or inert species is selected from carbon, boron, nitrogen, silicon, phosphorous, argon, helium, neon, krypton, xenon or combinations thereof. The method further comprises patterning the doped amorphous carbon film. The method further comprises etching the underlayer.

公开(公告)号：US20200335339A1

公开(公告)日：2020-10-22

申请号：US16867095

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Tzu-shun YANG ,  Rui CHENG ,  Karthik JANAKIRAMAN ,  Zubin HUANG ,  Diwakar KEDLAYA ,  Meenakshi GUPTA ,  Srinivas GUGGILLA ,  Yung-chen LIN ,  Hidetaka OSHIO ,  Chao LI ,  Gene LEE

IPC: H01L21/033

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.

公开(公告)号：US20230093450A1

公开(公告)日：2023-03-23

申请号：US18072457

申请日：2022-11-30

Applicant: Applied Materials, Inc.

Inventor： Tzu-shun YANG ,  Rui CHENG ,  Karthik JANAKIRAMAN ,  Zubin HUANG ,  Diwakar KEDLAYA ,  Meenakshi GUPTA ,  Srinivas GUGGILLA ,  Yung-chen LIN ,  Hidetaka OSHIO ,  Chao LI ,  Gene LEE

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3213

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.

公开(公告)号：US20230041963A1

公开(公告)日：2023-02-09

申请号：US17963841

申请日：2022-10-11

Applicant: Applied Materials, Inc.

Inventor： Rajesh PRASAD ,  Sarah BOBEK ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Harry WHITESELL ,  Hidetaka OSHIO ,  Dong Hyung LEE ,  Deven Matthew Raj MITTAL ,  Scott FALK ,  Venkataramana R. CHAVVA

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/26 ,  C23C16/56 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3115

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

公开(公告)号：US20220013359A1

公开(公告)日：2022-01-13

申请号：US17459839

申请日：2021-08-27

Applicant: Applied Materials, Inc.

Inventor： Takehito KOSHIZAWA ,  Rui CHENG ,  Tejinder SINGH ,  Hidetaka OSHIO

IPC: H01L21/033 ,  H01L21/311

Abstract: In an embodiment, a method for forming features for semiconductor processing. A first mandrel and a second mandrel are formed on a substrate. A first spacer is formed along a first sidewall of the first mandrel, and a second spacer is formed along a second sidewall of the second mandrel. A gap is defined between the first spacer and the second spacer. The gap is filled by a gap-filling material. In some examples, the gap-filling material includes a doped silicon material. In some examples, the first spacer and the second spacer each include a doped silicon material.

公开(公告)号：US20200335338A1

公开(公告)日：2020-10-22

申请号：US16821759

申请日：2020-03-17

Applicant: Applied Materials, Inc.

Inventor： Tzu-Shun YANG ,  Rui CHENG ,  Karthik JANAKIRAMAN ,  Zubin HUANG ,  Diwakar KADLAYA ,  Meenakshi GUPTA ,  Srinivas GUGGILLA ,  Yung-chen LIN ,  Hidetaka OSHIO ,  Chao LI ,  Gene LEE

IPC: H01L21/033

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a mandrel layer on a substrate, conformally forming a spacer layer on the mandrel layer, wherein the spacer layer is a doped silicon material, and patterning the spacer layer. In another embodiment, a method for forming features on a substrate includes conformally forming a spacer layer on a mandrel layer on a substrate, wherein the spacer layer is a doped silicon material, selectively removing a portion of the spacer layer using a first gas mixture, and selectively removing the mandrel layer using a second gas mixture different from the first gas mixture.

公开(公告)号：US20230029929A1

公开(公告)日：2023-02-02

申请号：US17963059

申请日：2022-10-10

Applicant: Applied Materials, Inc.

Inventor： Rajesh PRASAD ,  Sarah BOBEK ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Harry WHITESELL ,  Hidetaka OSHIO ,  Dong Hyung LEE ,  Deven Matthew Raj MITTAL ,  Scott FALK ,  Venkataramana R. CHAVVA

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/26 ,  C23C16/56 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3115

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

公开(公告)号：US20200373159A1

公开(公告)日：2020-11-26

申请号：US16853500

申请日：2020-04-20

Applicant: Applied Materials, Inc.

Inventor： Takehito KOSHIZAWA ,  Rui CHENG ,  Tejinder SINGH ,  Hidetaka OSHIO

IPC: H01L21/033 ,  H01L21/311

Abstract: In an embodiment, a method for forming features for semiconductor processing. A first mandrel and a second mandrel are formed on a substrate. A first spacer is formed along a first sidewall of the first mandrel, and a second spacer is formed along a second sidewall of the second mandrel. A gap is defined between the first spacer and the second spacer. The gap is filled by a gap-filling material. In some examples, the gap-filling material includes a doped silicon material. In some examples, the first spacer and the second spacer each include a doped silicon material.