公开(公告)号：US20180158686A1

公开(公告)日：2018-06-07

申请号：US15815932

申请日：2017-11-17

Applicant: Applied Materials, Inc.

Inventor： Avgerinos V. Gelatos ,  Takashi Kuratomi ,  Hyuck Lim ,  I-Cheng Chen ,  Mei Chang

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/50 ,  C23C16/08

CPC classification number: H01L21/28518 ,  C23C16/045 ,  C23C16/08 ,  C23C16/50 ,  C23C16/505 ,  H01L21/02068 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76879 ,  H01L21/76889

Abstract: Methods to selectively deposit titanium-containing films on silicon-containing surfaces in high aspect ratio features of substrates comprise plasma-enhanced chemical vapor deposition (PECVD) process at a plasma powers in the range of about 1 to less than about 700 mWatts/cm2 and frequencies in the range of about 10 kHz to about 50 MHz. The titanium films may be selectively deposited with a selectivity in the range of at least about 1.3:1 metallic silicon surfaces relative to silicon dioxide surfaces.