公开(公告)号：US20250112039A1

公开(公告)日：2025-04-03

申请号：US18376057

申请日：2023-10-03

Applicant: Applied Materials, Inc.

Inventor： John Bae ,  Praket Prakash Jha ,  Shuchi Sunil Ojha ,  Jingmei Liang

IPC: H01L21/02 ,  H01L21/3065

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate including one or more features may be housed within the processing region. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming plasma effluents of the silicon-containing precursor and the hydrogen-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend into the one or more features.