公开(公告)号：US12020907B2

公开(公告)日：2024-06-25

申请号：US16844106

申请日：2020-04-09

Applicant: Applied Materials, Inc.

Inventor： Arun Thottappayil ,  Mayur Govind Kulkarni ,  Junghoon Sun ,  Jun Tae Choi ,  Hang Yu

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J37/32366 ,  H01J37/32513 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32834 ,  H01L21/0262 ,  H01J2237/332

Abstract: Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and the substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The faceplate may be characterized by a central axis. The faceplate may define a plurality of apertures through the faceplate distributed in a number of rings. Each ring of apertures may include a scaled increase in aperture number from a ring radially inward. A radially outermost ring of apertures may be characterized by a number of apertures reduced from the scaled increase in aperture number.

公开(公告)号：US20210319981A1

公开(公告)日：2021-10-14

申请号：US16844106

申请日：2020-04-09

Applicant: Applied Materials, Inc.

Inventor： Arun Thottappayil ,  Mayur Govind Kulkarni ,  Junghoon Sun ,  Jun Tae Choi ,  Hang Yu

IPC: H01J37/32 ,  H01L21/02

Abstract: Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and the substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The faceplate may be characterized by a central axis. The faceplate may define a plurality of apertures through the faceplate distributed in a number of rings. Each ring of apertures may include a scaled increase in aperture number from a ring radially inward. A radially outermost ring of apertures may be characterized by a number of apertures reduced from the scaled increase in aperture number.