公开(公告)号：US20250054749A1

公开(公告)日：2025-02-13

申请号：US18366395

申请日：2023-08-07

Applicant: Applied Materials, Inc.

Inventor： Kent Zhao ,  Rui Lu ,  Bo Xie ,  Shanshan Yao ,  Xiaobo Li ,  Chi-I Lang ,  Li-Qun Xia ,  Shankar Venkataraman

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56 ,  H01J37/32

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region. The plasma may be at least partially formed by a pulsing RF power operating at less than or about 2,000 W. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.

公开(公告)号：US20250069884A1

公开(公告)日：2025-02-27

申请号：US18238107

申请日：2023-08-25

Applicant: Applied Materials, Inc.

Inventor： Rui Lu ,  Bo Xie ,  Kent Zhao ,  Shanshan Yao ,  Xiaobo Li ,  Chi-I Lang ,  Li-Qun Xia ,  Shankar Venkataraman

IPC: H01L21/02

Abstract: Exemplary semiconductor processing methods may include providing a first silicon-containing precursor and a second silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The first silicon-containing precursors may include Si—O bonding. The methods may include forming a plasma of the first silicon-containing precursor and the second silicon-containing precursor in the processing region. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.