公开(公告)号：US20220259720A1

公开(公告)日：2022-08-18

申请号：US17177875

申请日：2021-02-17

Applicant: Applied Materials, Inc.

Inventor： Suhas BANGALORE UMESH ,  Preetham RAO ,  Shirish A. PETHE ,  Fuhong ZHANG ,  Kishor Kumar KALATHIPARAMBIL ,  Martin Lee RIKER ,  Lanlan ZHONG

IPC: C23C14/50 ,  C23C14/34 ,  C23C14/54

Abstract: Methods and apparatus for processing a plurality of substrates are provided herein. In some embodiments, a method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber includes: performing a series of reflow processes on a corresponding series of substrates over at least a portion of a life of a sputtering target disposed in the PVD chamber, wherein a substrate-to-target distance in the PVD chamber and a support-to-target distance within the PVD chamber are each controlled as a function of the life of the sputtering target.

公开(公告)号：US20220380888A1

公开(公告)日：2022-12-01

申请号：US17334630

申请日：2021-05-28

Applicant: Applied Materials, Inc.

Inventor： Goichi YOSHIDOME ,  Suhas BANGALORE UMESH ,  Sushil Arun SAMANT ,  Martin Lee RIKER ,  Wei LEI ,  Kishor Kumar KALATHIPARAMBIL ,  Shirish A. PETHE ,  Fuhong ZHANG ,  Prashanth KOTHNUR ,  Andrew TOMKO

IPC: C23C14/35 ,  H01J37/34

Abstract: Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate in the PVD chamber, one or more first magnets disposed about the support pedestal and providing an increased magnetic field strength at an edge region of the substrate, and one or more second magnets disposed below the support pedestal that increase a magnetic field strength at a central region of the substrate.

公开(公告)号：US20230017383A1

公开(公告)日：2023-01-19

申请号：US17375654

申请日：2021-07-14

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Joung Joo LEE ,  Komal GARDE ,  Kishor Kumar KALATHIPARAMBIL ,  Xianmin TANG ,  Xiangjin XIE ,  Rui LI

IPC: H01L21/768 ,  H01L21/285 ,  C23C14/34

Abstract: Methods and apparatus for processing a substrate are provided. For example, a method includes sputtering a material from a target in a PVD chamber to form a material layer on a layer comprising a feature of the substrate, the feature having an opening width defined by a first sidewall and a second sidewall, the material layer having a greater lateral thickness at the top surface of the layer than a thickness on the first sidewall or the second sidewall within the feature, depositing additional material on the layer by biasing the layer with an RF bias at a low power, etching the material layer from the layer by biasing the layer with an RF bias at a high-power, and repeatedly alternating between the low power and the high-power at a predetermined frequency.

公开(公告)号：US20220384164A1

公开(公告)日：2022-12-01

申请号：US17507122

申请日：2021-10-21

Applicant: Applied Materials, Inc.

Inventor： Suhas BANGALORE UMESH ,  Kishor Kumar KALATHIPARAMBIL ,  Goichi YOSHIDOME

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/35

Abstract: A plasma vapor deposition (PVD) chamber used for depositing material includes an apparatus for influencing ion trajectories during deposition on a substrate. The apparatus includes at least one annular support assembly configured to be externally attached to and positioned below a substrate support pedestal and a magnetic field generator affixed to the annular support assembly and configured to radiate magnetic fields on a top surface of the substrate. The magnetic field generator may include a plurality of symmetrically spaced discrete permanent magnets or may use one or more electromagnets to generate the magnetic fields.