公开(公告)号：US20020125440A1

公开(公告)日：2002-09-12

申请号：US09800797

申请日：2001-03-07

Applicant: Applied Materials, Inc.

Inventor： Max Gmur

IPC: H01J003/14

CPC classification number: H01J9/02 ,  H01J37/1477 ,  H01J2237/1205

Abstract: A wafer (300) has applied to it an etch stop layer (304) and a carrier wafer (308). Photoresist on the wafer (300) is patterned as multiple multipole deflectors by optical lithography. The pattern is then etched. The wafer (300) is removed from the carrier wafer (308) and the etch stop layer (304) is removed. The wafer (300) is then anodically bonded to a heat resistant glass substrate (309). Wafer dic ng is then employed to separate the chips and the octopole deflectors.

Abstract translation: 晶片（300）向其施加了蚀刻停止层（304）和载体晶片（308）。 通过光学光刻将晶片（300）上的光致抗蚀剂图案化为多个多极偏转器。 然后刻蚀图案。 将晶片（300）从载体晶片（308）移除，并且去除蚀刻停止层（304）。 然后将晶片（300）阳极结合到耐热玻璃基板（309）上。 然后使用晶片分离芯片和八极偏转器。