公开(公告)号：USD1007449S1

公开(公告)日：2023-12-12

申请号：US29782632

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Designer： David Gunther ,  Kirankumar Neelasandra Savandaiah ,  Jiao Song ,  Madan Kumar Shimoga Mylarappa ,  Yue Cui ,  Nuno Yen-Chu Chen ,  Mengxue Wu

Abstract: FIG. 1 is a top perspective view of a sputtering target for a physical vapor deposition chamber, according to one embodiment of the novel design.
FIG. 2 is a top plan view thereof.
FIG. 3 is a bottom plan view thereof.
FIG. 4 is a right side elevation view thereof.
FIG. 5 is a left side elevation view thereof.
FIG. 6 is a front elevation thereof.
FIG. 7 is a back elevation view thereof; and,
FIG. 8 is an enlarged partial right side elevation view showing portions of the design in greater detail.
The dash-dash broken lines in FIGS. 1-8 represent unclaimed environment and form no part of the claimed design.
The short dash-dot lines on FIG. 4 and FIG. 8 depict the bounds of the region taken from FIG. 4 to be enlarged on FIG. 8 and form no part of the claimed design.

公开(公告)号：US11784033B2

公开(公告)日：2023-10-10

申请号：US17333732

申请日：2021-05-28

Applicant: Applied Materials, Inc.

Inventor： Mengxue Wu ,  Siew Kit Hoi ,  Jay Min Soh ,  Yue Cui ,  Chul Nyoung Lee ,  Palaniappan Chidambaram ,  Jiao Song

IPC: C23C14/35 ,  H01J3/34 ,  H01J37/34 ,  C23C14/54 ,  C23C14/34

CPC classification number: H01J37/3476 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3455 ,  C23C14/351

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises applying a DC target voltage to a target disposed within a processing volume of a plasma processing chamber, rotating a magnet disposed above the target at a default speed to direct sputter material from the target toward a substrate support disposed within the processing volume, measuring in-situ DC voltage in the processing volume, the in-situ DC voltage different from the DC target voltage, determining if a measured in-situ DC voltage is greater than a preset value, if the measured in-situ DC voltage is less than or equal to the preset value, maintaining the magnet at the default speed, and if the measured in-situ DC voltage is greater than the preset value, rotating the magnet at a speed less than the default speed to decrease the in-situ DC voltage.

公开(公告)号：USD1053230S1

公开(公告)日：2024-12-03

申请号：US29839271

申请日：2022-05-19

Applicant: Applied Materials, Inc.

Designer： Siew Kit Hoi ,  Jay Min Soh ,  Mengxue Wu ,  Palaniappan Chidambaram

公开(公告)号：US11761078B2

公开(公告)日：2023-09-19

申请号：US17329796

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Mengxue Wu ,  Siew Kit Hoi ,  Jay Min Soh

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35

CPC classification number: C23C14/3407 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3426 ,  H01J37/3455

Abstract: Methods and apparatus for processing substrates are provided herein. For example, a magnet to target spacing system configured for use with an apparatus for processing a substrate comprises a sensor configured to provide a signal corresponding to a distance between a front of a magnet and a back of a target while rotating the magnet with respect to the target and a magnet controller configured to control the distance between the front of the magnet and the back of the target based upon the signal provided by the sensor.