公开(公告)号：US20230416915A1

公开(公告)日：2023-12-28

申请号：US18208695

申请日：2023-06-12

Applicant: Applied Materials, Inc.

Inventor： Geetika Bajaj ,  Amit Kumar Roy ,  Shonal Chouksey ,  Seshadri Ganguli ,  Gopi Chandran Ramachandran ,  Srinivas Gandikota

IPC: C23C16/455 ,  H01L21/02 ,  H01L21/285

CPC classification number: C23C16/45553 ,  H01L21/28562 ,  H01L21/0228 ,  C23C16/45529

Abstract: Exemplary methods of semiconductor processing may include providing a first precursor to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The first precursor may include a first metal. The methods may include contacting the substrate with the first precursor. The contacting may form a first portion of a metal oxide material on the substrate. The methods may include providing a second precursor to the semiconductor processing chamber. The second precursor may be an oxygen-containing precursor including an alcohol, an alkoxide, a hydroxide, an acetylacetonate, an acetate, a formate, a nitrate, a sulfate, a phosphate, a phosphide, a carbonate, an oxide, an oxynitride, a perchlorate, an oxyhalide, a peroxide, an oxalate, or a phenolate. The methods may include contacting the first portion of the metal oxide material with the second precursor. The contacting may form a metal oxide material.

公开(公告)号：US20230420486A1

公开(公告)日：2023-12-28

申请号：US18208710

申请日：2023-06-12

Applicant: Applied Materials, Inc.

Inventor： Geetika Bajaj ,  Shonal Chouksey ,  Amit Kumar Roy ,  Darshan Thakare ,  Seshadri Ganguli ,  Gopi Chandran Ramachandran ,  Srinivas Gandikota ,  Jayeeta Sen

IPC: H01L21/02

CPC classification number: H01L28/40 ,  H01L21/02271

Abstract: Exemplary methods of semiconductor processing may include providing a first precursor to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The first precursor may include one or more of niobium, tantalum, or titanium. The methods may include contacting the substrate with the first precursor. The contacting may form a layer of metal on the substrate. The methods may include providing a second precursor to a semiconductor processing chamber. The second precursor comprises oxygen. The methods may include contacting the layer of metal with the second precursor. The contacting may form a layer of metal oxide on the substrate. The layer of metal oxide may be one or more of niobium oxide, tantalum oxide, or titanium oxide.