公开(公告)号：US20140196746A1

公开(公告)日：2014-07-17

申请号：US13743646

申请日：2013-01-17

Applicant: Applied Materials, Inc.

Inventor： Robert Dinsmore ,  John C. Forster ,  Song-Moon Sun ,  Cheng-Hsiung Tsai ,  Glen T. Mori

IPC: H01L21/02

CPC classification number: H01L21/02063 ,  H01L21/02068 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/1134 ,  H01L2924/00014

Abstract: Embodiments of the present invention generally relate to a method for cleaning a processing chamber during substrate processing. During a first substrate processing step, a plasma is formed from a gas mixture of argon, helium, and hydrogen in the processing chamber. In a second substrate processing step, an argon plasma is formed in the processing chamber.

Abstract translation: 本发明的实施例一般涉及在衬底处理期间清洁处理室的方法。 在第一基板处理步骤期间，在处理室中由氩，氦和氢的气体混合物形成等离子体。 在第二基板处理步骤中，在处理室中形成氩等离子体。