公开(公告)号：US20200058539A1

公开(公告)日：2020-02-20

申请号：US16520166

申请日：2019-07-23

Applicant: Applied Materials, Inc.

Inventor： Sudha RATHI ,  Dong Hyung LEE ,  Abdul Aziz KHAJA ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA

IPC: H01L21/687 ,  H01L21/683 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/40

Abstract: Embodiments described herein relate to coating materials with high resistivity for use in processing chambers. To counteract the high charges near the top surface of the thermal conductive support, the top surface of the thermal conductive support can be coated with a high resistivity layer. The high resistivity of the layer reduces the amount of charge at the top surface of the thermally conductive element, greatly reducing or preventing arcing incidents along with reducing electrostatic chucking degradation. The high resistivity layer can also be applied to other chamber components. Embodiments described herein also relate to methods for fabricating a chamber component for use in a processing environment. The component can be fabricated by forming a body of a chamber component, optionally ex-situ seasoning the body, installing the chamber component into a processing chamber, in-situ seasoning the chamber component, and performing a deposition process in the processing chamber.

公开(公告)号：US20250130500A1

公开(公告)日：2025-04-24

申请号：US18923789

申请日：2024-10-23

Applicant: Applied Materials, Inc.

Inventor： Sudha RATHI ,  Rui WANG ,  Pramit MANNA ,  Karthik JANAKIRAMAN

IPC: G03F7/16 ,  H01J37/32

Abstract: The present disclosure generally relates to semiconductor processing and, in particular, provides methods of forming a resist underlayer on a substrate for use in EUV lithography processing. In an embodiment, the method includes flowing a precursor gas mixture into the processing region of the process chamber, applying a pulsed RF power to the precursor gas mixture to generate a plasma in the processing region, depositing a resist underlayer on the substrate with the plasma generated from the pulsed RF power, and forming a patterned chemically amplified photoresist (CAR) over the resist underlayer.

公开(公告)号：US20160064209A1

公开(公告)日：2016-03-03

申请号：US14934923

申请日：2015-11-06

Applicant: Applied Materials, Inc.

Inventor： Kwangduk Douglas LEE ,  Sudha RATHI ,  Ramprakash SANKARAKRISHNAN ,  Martin Jay SEAMONS ,  Irfan JAMIL ,  Bok Hoen KIM

IPC: H01L21/02 ,  B08B7/00

Abstract: Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.

公开(公告)号：US20160099147A1

公开(公告)日：2016-04-07

申请号：US14549380

申请日：2014-11-20

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Sudha RATHI ,  Praket P. JHA ,  Saptarshi BASU ,  Kwangduk Douglas LEE ,  Martin J. SEAMONS ,  Bok Hoen KIM ,  Ganesh BALASUBRAMANIAN ,  Ziqing DUAN ,  Lei JING ,  Mandar B. PANDIT

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/66 ,  H01L21/033

CPC classification number: H01L21/02274 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/02115 ,  H01L21/0337 ,  H01L21/31144 ,  H01L22/12

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

Abstract translation: 用于调制一个或多个图案化膜的局部应力和覆盖误差的方法可以包括调节引入室主体的气体的气流分布，将腔体内的气体朝向衬底流动，旋转衬底， 通过使用双区加热器控制基板温度，来实现基板的边缘温度分布。 用于沉积膜的室可以包括包括一个或多个处理区域的室主体。 腔室主体可以包括气体分配组件，其具有用于将气体输送到一个或多个处理区域中的阻挡板。 阻挡板可以具有第一区域和第二区域，并且第一区域和第二区域各自可以具有多个孔。 腔体可以具有双区加热器。

公开(公告)号：US20140017897A1

公开(公告)日：2014-01-16

申请号：US14028025

申请日：2013-09-16

Applicant: Applied Materials, Inc.

Inventor： Martin Jay SEAMONS ,  Sudha RATHI ,  Kwangduk Douglas LEE ,  Deenesh PADHI ,  Bok Hoen KIM ,  Chiu CHAN

IPC: H01L21/64

CPC classification number: H01L21/64 ,  C23C16/0272 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/31144

Abstract: Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a boron-containing amorphous carbon film is disclosed. The boron-containing amorphous carbon film comprises from about 10 to 60 atomic percentage of boron, from about 20 to about 50 atomic percentage of carbon, and from about 10 to about 30 atomic percentage of hydrogen.

Abstract translation: 本发明的实施例一般涉及集成电路的制造，特别涉及在半导体衬底上沉积含硼无定形碳层。 在一个实施方案中，公开了含硼无定形碳膜。 含硼无定形碳膜包含约10至60原子百分数的硼，约20至约50原子百分比的碳和约10至约30原子百分比的氢。

公开(公告)号：US20160307752A1

公开(公告)日：2016-10-20

申请号：US15192732

申请日：2016-06-24

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Sudha RATHI ,  Praket P. JHA ,  Saptarshi BASU ,  Kwangduk Douglas LEE ,  Martin J. SEAMONS ,  Bok Hoen KIM ,  Ganesh BALASUBRAMANIAN ,  Ziqing DUAN ,  Lei JING ,  Mandar B. PANDIT

IPC: H01L21/02 ,  H01L21/033 ,  C23C16/04 ,  C23C16/458 ,  C23C16/46 ,  H01L21/66 ,  C23C16/455

CPC classification number: H01L21/02274 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/02115 ,  H01L21/0337 ,  H01L21/31144 ,  H01L22/12

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

公开(公告)号：US20160133443A1

公开(公告)日：2016-05-12

申请号：US15000857

申请日：2016-01-19

Applicant: Applied Materials, Inc.

Inventor： Kwangduk Douglas LEE ,  Sudha RATHI ,  Ramprakash SANKARAKRISHNAN ,  Martin Jay SEAMONS ,  Irfan JAMIL ,  Bok Hoen KIM

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32853 ,  B08B7/0035 ,  G03F7/427 ,  H01L21/02041 ,  H01L21/31116

Abstract: Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.

Abstract translation: 本发明的实施方案一般涉及干燥汽提硼 - 碳膜的方法。 在一个实施方案中，使用氢和氧的交替等离子体去除硼 - 碳膜。 在另一个实施方案中，使用共流氧和氢等离子体去除含硼碳膜。 除了作为上述氧等离子体中的任一种之外，还可以使用一氧化二氮等离子体。 在另一个实施方案中，使用由水蒸气产生的等离子体来除去硼 - 碳膜。 在除去硼 - 碳膜之前，硼 - 碳去除方法还可以包括任选的聚合物去除方法。 聚合物去除方法包括将硼 - 碳膜暴露于NF3以从硼 - 碳膜的表面除去在基板蚀刻工艺期间产生的任何碳基聚合物。