公开(公告)号：US20250022709A1

公开(公告)日：2025-01-16

申请号：US18899930

申请日：2024-09-27

Applicant: Applied Materials, Inc.

Inventor： Byung Seok KWON ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Bushra AFZAL ,  Sungwon HA ,  Vinay K. PRABHAKAR ,  Viren KALSEKAR ,  Satya THOKACHICHU ,  Edward P. HAMMOND, IV

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/46 ,  C23C16/505 ,  H01L21/02

Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100° C. to about 700° C. and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300° C. to about 700° C. and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000 Å/min, such as up to about 10,000 Å/min or faster.

公开(公告)号：US20160049323A1

公开(公告)日：2016-02-18

申请号：US14824229

申请日：2015-08-12

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Jay D. PINSON, II ,  Hiroji HANAWA ,  Jianhua ZHOU ,  Xing LIN ,  Ren-Guan DUAN ,  Kwangduk Douglas LEE ,  Bok Hoen KIM ,  Swayambhu P. BEHERA ,  Sungwon HA ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA- ALVAREZ ,  Prashant Kumar KULSHRESHTHA ,  Jason K. FOSTER ,  Mukund SRINIVASAN ,  Uwe P. HALLER ,  Hari K. PONNEKANTI

IPC: H01L21/683 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01L21/68757 ,  H02N13/00

Abstract: Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.

Abstract translation: 本公开的实施例提供了一种静电卡盘，用于在高温下维持在等离子体反应器中正在加工的基板的平坦度。 在一个实施例中，静电卡盘包括联接到支撑杆的卡盘体，卡盘主体具有基底支撑表面，卡盘体的体积电阻率值约为1×107ohm-cm至约1×1015ohm- 在约250℃至约700℃的温度下，以及嵌入在本体中的电极，电极耦合到电源。 在一个实例中，卡盘主体由氮化铝材料组成，已经被观察到能够在沉积或蚀刻过程期间优化约600℃或更高的夹持性能，或任何其他使用高工作温度和 基板夹紧功能。

公开(公告)号：US20200224310A1

公开(公告)日：2020-07-16

申请号：US16716233

申请日：2019-12-16

Applicant: Applied Materials, Inc.

Inventor： Sarah Michelle BOBEK ,  Venkata Sharat Chandra PARIMI ,  Prashant Kumar KULSHRESHTHA ,  Vinay K. PRABHAKAR ,  Kwangduk Douglas LEE ,  Sungwon HA ,  Jian LI

IPC: C23C16/458 ,  C23C16/46

Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.

公开(公告)号：US20150136325A1

公开(公告)日：2015-05-21

申请号：US14539914

申请日：2014-11-12

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Ganesh BALASUBRAMANIAN ,  Thuy BRICHER ,  Jay D. PINSON, II ,  Hiroji HANAWA ,  Juan Carlos ROCHA-ALVAREZ ,  Kwangduk Douglas LEE ,  Martin Jay SEAMONS ,  Bok Hoen KIM ,  Sungwon HA

IPC: H01J37/32 ,  C23C16/513 ,  C23C16/509 ,  H01L21/67

Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

Abstract translation: 用于修改沉积在等离子体处理室中的薄膜的均匀性图案的系统包括耦合到等离子体处理室的放电电极上的多个点的单个射频（RF）电源。 选择多个耦合点的定位，多个耦合点之间的功率分布或两者的组合以至少部分地补偿由腔室产生的薄膜的一致的不均匀图案。 多个耦合点之间的功率分布可以由在多个耦合点中的每个耦合点处施加的RF功率之间的适当的RF相位差产生。

公开(公告)号：US20250125129A1

公开(公告)日：2025-04-17

申请号：US18988703

申请日：2024-12-19

Applicant: Applied Materials, Inc.

Inventor： Sarah Michelle BOBEK ,  Venkata Sharat Chandra PARIMI ,  Sungwon HA ,  Kwangduk Douglas LEE

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/505 ,  H01L21/02 ,  H01L21/033 ,  H01L21/67

Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The system may include a substrate support extending through the base of the chamber body. The chamber body may define an access circumferentially extending about the substrate support at the base of the chamber body. The system may include one or more isolators disposed within the chamber body. The one or more isolators may define an exhaust path between the one or more isolators and the chamber body. The exhaust path may extend to the base of the chamber body. The systems may include a fluid source fluidly coupled with the chamber body at the access extending about the substrate support.

公开(公告)号：US20170178758A1

公开(公告)日：2017-06-22

申请号：US15369219

申请日：2016-12-05

Applicant: Applied Materials, Inc.

Inventor： Sungwon HA ,  Paul CONNORS ,  Jianhua ZHOU ,  Juan Carlos ROCHA-ALVAREZ ,  Kwangduk Douglas LEE ,  Ziqing DUAN ,  Nicolas J. BRIGHT ,  Feng BI

IPC: G21F3/00 ,  C23C16/458 ,  C23C16/50 ,  C23C16/448

CPC classification number: C23C16/448 ,  C23C16/50 ,  H01J37/32724 ,  H01L21/67115 ,  H01L21/6719

Abstract: The present disclosure generally relates to a radiation shield for a process chamber which improves substrate temperature uniformity. The radiation shield may be disposed between a slit valve door of the process chamber and a substrate support disposed within the process chamber. In some embodiments, the radiation shield may be disposed under a heater of the process chamber. Furthermore, the radiation shield may block radiation and/or heat supplied from the process chamber, and in some embodiments, the radiation shield may absorb and/or reflect radiation, thus providing improved temperature uniformity as well as improving a planar profile of the substrate.

公开(公告)号：US20230203659A1

公开(公告)日：2023-06-29

申请号：US18111842

申请日：2023-02-20

Applicant: Applied Materials, Inc.

Inventor： Sarah Michelle BOBEK ,  Venkata Sharat Chandra PARIMI ,  Prashant Kumar KULSHRESHTHA ,  Vinay K. PRABHAKAR ,  Kwangduk Douglas LEE ,  Sungwon HA ,  Jian LI

IPC: C23C16/458 ,  C23C16/46

CPC classification number: C23C16/4586 ,  C23C16/46 ,  C23C16/4585

Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.

公开(公告)号：US20210043455A1

公开(公告)日：2021-02-11

申请号：US16982789

申请日：2019-03-21

Applicant: Applied Materials, Inc.

Inventor： Byung Seok KWON ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Bushra AFZAL ,  Sungwon HA ,  Vinay K. PRABHAKAR ,  Viren KALSEKAR ,  Satya Teja Babu THOKACHICHU ,  Edward P. HAMMOND, IV

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/46 ,  H01L21/02 ,  C23C16/26

Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300C to about 700C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.

公开(公告)号：US20150247237A1

公开(公告)日：2015-09-03

申请号：US14594296

申请日：2015-01-12

Applicant: Applied Materials, Inc.

Inventor： Sungwon HA ,  Kwangduk Douglas LEE ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA-ALVAREZ ,  Martin Jay SEAMONS ,  Ziqing DUAN ,  Zheng John YE ,  Bok Hoen KIM ,  Lei JING ,  Ngoc LE ,  Ndanka MUKUTI

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/45565 ,  C23C16/4401 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32449

Abstract: Embodiments described herein relate to a faceplate for improving film uniformity. A semiconductor processing apparatus includes a pedestal, an edge ring and a faceplate having distinct regions with differing hole densities. The faceplate has an inner region and an outer region which surrounds the inner region. The inner region has a greater density of holes formed therethrough when compared to the outer region. The inner region is sized to correspond with a substrate being processed while the outer region is sized to correspond with the edge ring.

Abstract translation: 本文所述的实施例涉及一种用于提高膜均匀性的面板。 半导体处理装置包括具有不同孔洞密度区域的基座，边缘环和面板。 面板具有内部区域和围绕内部区域的外部区域。 当与外部区域相比时，内部区域具有通过其形成的更大密度的孔。 内部区域的尺寸被设计成与被处理的基底相对应，而外部区域的尺寸被设计成与边缘环相对应。