公开(公告)号：US20250105013A1

公开(公告)日：2025-03-27

申请号：US18371179

申请日：2023-09-21

Applicant: Applied Materials, Inc.

Inventor： Zhaoxuan Wang ,  Wenting Hou ,  Jianxin Lei ,  Tza-Jing Gung ,  Sahil Jaykumar Patel

IPC: H01L21/285 ,  H01L21/324 ,  H01L23/532

Abstract: Metal stacks and methods of depositing a metal stack on a semiconductor substrate are disclosed. The metal stack is formed by depositing a tungsten (W) layer on the semiconductor substrate and depositing a molybdenum (Mo) layer on the tungsten (W) layer. The tungsten (W) layer has a thickness in a range of from 5 Å to 30 Å and the molybdenum (Mo) layer has a thickness in a range of from 80 Å to 200 Å. In some embodiments, the metal stack has a resistivity of less than or equal to 10 μΩ-cm prior to treatment and a resistivity of less than or equal to 11 μΩ-cm after treatment when the metal stack has a total thickness of 140 Å.

公开(公告)号：US20250140562A1

公开(公告)日：2025-05-01

申请号：US18922669

申请日：2024-10-22

Applicant: Applied Materials, Inc.

Inventor： Zhaoxuan Wang ,  Wenting Hou ,  Jianxin Lei ,  Qixin Shen ,  Hang Yu

IPC: H01L21/285 ,  H01L21/02

Abstract: Metal stacks and methods of depositing a metal stack on a semiconductor substrate are disclosed. The metal stack is formed by depositing a tungsten (W) layer on the semiconductor substrate and depositing a molybdenum (Mo) layer on the tungsten (W) layer. In one method, a tungsten (W) capping layer is deposited on the molybdenum (Mo) layer, followed by formation of a nitride capping layer on the tungsten (W) capping layer). In a second method, a nitride capping layer is formed on the molybdenum (Mo) layer using an ammonia free process. Both processes result in the formation of a metal stack having low resistivity.