公开(公告)号：US20240204484A1

公开(公告)日：2024-06-20

申请号：US18084896

申请日：2022-12-20

Applicant: Applied Optoelectronics, Inc.

Inventor： Dapeng XU ,  Klaus Alexander ANSELM ,  Huanlin ZHANG

IPC: H01S5/20 ,  H01S5/02 ,  H01S5/227

CPC classification number: H01S5/2054 ,  H01S5/0206 ,  H01S5/2275 ,  H01S5/34

Abstract: A multi-section semiconductor optical amplifier (SOA) includes at least two sections in series—an input section at an input side and an output section at an output side—with the input section having a higher optical confinement (also referred to as a high gamma) and the output section having a lower optical confinement (also referred to as a low gamma). The input section may also have a shorter length than the output section. The multi-section structure allows optimizing the input side and the output side design separately such that the input section provides a high gain section configured to quickly increase optical power and the output section provides a low differential gain section that improves saturation. As a result, the multi-section SOA can achieve higher output power with high gain and lower signal noise while demanding low input power.

公开(公告)号：US20230411931A1

公开(公告)日：2023-12-21

申请号：US17841983

申请日：2022-06-16

Applicant: Applied Optoelectronics, Inc.

Inventor： Dapeng XU ,  Dion MCINTOSH-DORSEY ,  Huanlin ZHANG

IPC: H01S5/227 ,  H01S5/22

CPC classification number: H01S5/227 ,  H01S5/34 ,  H01S5/2205

Abstract: A semiconductor optical device including a buried heterostructure (BH) has reduced parasitic capacitance and reduced inter-diffusion. The semiconductor optical device is manufactured by a regrowth on both sides of a mesa structure with an Fe-doped current blocking layer and an n-type cladding layer outside of an active region in the mesa structure. The Fe-doped current blocking layer and the n-type cladding layer may be disposed and configured such that Fe/Zn inter-diffusion is reduced or prevented by minimal contact between the Fe-doped current blocking layer and a highly Zn-doped cladding layer and by the n-type cladding layer, as will be described in greater detail below. A low Zn-doped or undoped material may be used for a thin cladding layer above the active region in the mesa structure to further suppress Zn/Fe inter-diffusion.

公开(公告)号：US20230112885A1

公开(公告)日：2023-04-13

申请号：US17500248

申请日：2021-10-13

Applicant: Applied Optoelectronics, Inc.

Inventor： Dapeng XU ,  Huanlin ZHANG

IPC: H01S5/042 ,  H01S5/343 ,  H01S5/22 ,  H01S5/40

Abstract: An aspect of the present disclosure includes a direct modulated laser (DML) with a dielectric current confinement ridge waveguide (RWG) structure. The DML comprises a substrate, one or more layers of material disposed on the substrate to provide a multi quantum well (MQW), first and second insulation/dielectric structures disposed on opposite sides of the MQW, and one or more layers of material disposed on the MQW to provide a mesa structure for receiving a driving current. The mesa structure is preferably disposed between the first and second insulation structures to provide a dielectric current confinement (RWG) structure. The mesa structure further preferably includes an overall width that is greater than the overall width than the active region of the DML that provides the MQW.

公开(公告)号：US20230053516A1

公开(公告)日：2023-02-23

申请号：US17405416

申请日：2021-08-18

Applicant: Applied Optoelectronics, Inc.

Inventor： Dapeng XU ,  Jin HUANG ,  Huanlin ZHANG

IPC: H01S5/026 ,  H01S5/12 ,  H01S5/22 ,  H01S5/343

Abstract: The present disclosure is generally directed to an EML with a filter layer disposed between an active region of the EML and a substrate of the EML to absorb a portion of unmodulated light energy, and preferably the unmodulated light energy caused by transverse electric (TE) substrate mode. The filter layer preferably comprises a material with an energy band gap (Eg) that is less than the energy band gap of the predetermined channel wavelength to absorb unmodulated laser light.

公开(公告)号：US20210210930A1

公开(公告)日：2021-07-08

申请号：US16737453

申请日：2020-01-08

Applicant: Applied Optoelectronics, Inc.

Inventor： Kai-Sheng LIN ,  Yaohui GAO ,  Huanlin ZHANG

IPC: H01S5/343 ,  H01S5/042 ,  H01S5/022

Abstract: In general, a MQW semiconductor laser chip with an electrically insulated P-side region and a process for forming the same is disclosed. The MQW semiconductor laser chip, also referred to herein as a MQW semiconductor laser or simply a semiconductor laser, includes a layer of electrically insulative material that extends along at least a portion of the sidewalls to minimize or otherwise reduce the potential for electrical shorts between P and N-sides of the same when utilizing P-side bonding techniques.