公开(公告)号：US20250006779A1

公开(公告)日：2025-01-02

申请号：US18342963

申请日：2023-06-28

Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.

Inventor： Nathaniel P. Wyckoff ,  Jacob R. Mauermann ,  Alexander S. Warren ,  William J. Klema

IPC: H01G4/012 ,  H01G4/33 ,  H01L23/00 ,  H01L23/498 ,  H01G4/228

Abstract: Integrated capacitor structures are described. In an example, an interconnect structure includes a first layer of conductive material and a second layer of conductive material. The first layer includes a first horizontal portion having a first opening and extending along a first horizontal plane, and a first vertical portion. The second layer includes a second horizontal portion having a second opening and extending along a second horizontal plane, and a second vertical portion. The interconnect structure also includes a dielectric extending along a third horizontal plane between the first and second horizontal portions, and having one or more openings. The first vertical component extends upward from the first horizontal portion, through one opening in the dielectric and the second opening of second layer, and the second vertical component extends downward from the second horizontal portion, through another opening in the dielectric and the first opening of first layer.