公开(公告)号：US10658606B2

公开(公告)日：2020-05-19

申请号：US16168239

申请日：2018-10-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhuo Chen ,  YuJu Chen ,  Dong Li

IPC: H01L51/50 ,  H01L51/56

Abstract: A quantum dot light emitting device is disclosed. The quantum dot light emitting device includes a first electrode and a second electrode. The quantum dot light emitting device includes a quantum dot light emitting layer interposed between the first electrode and the second electrode. The quantum dot light emitting device includes a first hole transport layer located between the quantum dot light emitting layer and the first electrode. The quantum dot light emitting device includes a hole injection layer located between the first hole transport layer and the first electrode. The quantum dot light emitting device includes an electron transport layer located between the quantum dot light emitting layer and the second electrode. The quantum dot light emitting device includes a filling layer located between the electron transport layer and the quantum dot light emitting layer and embedded in the quantum dot light emitting layer.

公开(公告)号：US20190288225A1

公开(公告)日：2019-09-19

申请号：US16168239

申请日：2018-10-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhuo Chen ,  YuJu Chen ,  Dong Li

IPC: H01L51/50 ,  H01L51/56

Abstract: A quantum dot light emitting device is disclosed. The quantum dot light emitting device includes a first electrode and a second electrode. The quantum dot light emitting device includes a quantum dot light emitting layer interposed between the first electrode and the second electrode. The quantum dot light emitting device includes a first hole transport layer located between the quantum dot light emitting layer and the first electrode. The quantum dot light emitting device includes a hole injection layer located between the first hole transport layer and the first electrode. The quantum dot light emitting device includes an electron transport layer located between the quantum dot light emitting layer and the second electrode. The quantum dot light emitting device includes a filling layer located between the electron transport layer and the quantum dot light emitting layer and embedded in the quantum dot light emitting layer.

公开(公告)号：US10535839B2

公开(公告)日：2020-01-14

申请号：US15975985

申请日：2018-05-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jing Yu ,  YuJu Chen

IPC: H01L51/52

Abstract: The present disclosure relates to the field of display technology, and discloses a package structure and an organic light emitting display apparatus. The package structure includes a self-repairing functional layer and a heating layer for heating the self-repairing functional layer. A forming material of the self-repairing functional layer at least includes: a self-repairing material.

公开(公告)号：US10431763B2

公开(公告)日：2019-10-01

申请号：US15927544

申请日：2018-03-21

Applicant: BOE Technology Group Co., Ltd.

Inventor： YuJu Chen

IPC: H01L29/06 ,  H01L51/50 ,  H01L51/52 ,  H01L27/32 ,  H01L51/56 ,  H01L51/00 ,  G02F1/13357

Abstract: Provided are a light emitting diode and a preparation method thereof, an array substrate, and an electronic device. The light emitting diode comprises: a substrate, and a first electrode, a quantum rod light emitting layer and a second electrode disposed in lamination on the substrate, wherein, the quantum rod light emitting layer comprises a plurality of quantum rods which present a directional arrangement.

公开(公告)号：US20190165291A1

公开(公告)日：2019-05-30

申请号：US15927544

申请日：2018-03-21

Applicant: BOE Technology Group Co., Ltd.

Inventor： YuJu Chen

IPC: H01L51/50 ,  H01L51/52 ,  H01L27/32 ,  H01L51/56

CPC classification number: H01L51/502 ,  G02F1/1336 ,  H01L27/3223 ,  H01L27/3244 ,  H01L27/3246 ,  H01L51/0005 ,  H01L51/0012 ,  H01L51/0021 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0043 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5209 ,  H01L51/5225 ,  H01L51/5293 ,  H01L51/56 ,  H01L2251/558

Abstract: Provided are a light emitting diode and a preparation method thereof, an array substrate, and an electronic device. The light emitting diode comprises: a substrate, and a first electrode, a quantum rod light emitting layer and a second electrode disposed in lamination on the substrate, wherein, the quantum rod light emitting layer comprises a plurality of quantum rods which present a directional arrangement.