公开(公告)号：US20170222012A1

公开(公告)日：2017-08-03

申请号：US15328623

申请日：2015-09-02

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Long HAO ,  Yan JIN ,  Wei LI

IPC: H01L29/49 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L29/4916 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/762 ,  H01L21/76224 ,  H01L27/04 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/66477 ,  H01L29/66568

Abstract: A manufacturing method for a semiconductor device is provided. The method comprises: providing a semiconductor substrate (200); sequentially forming an oxide layer (201) and a silicon nitride layer (202) on the semiconductor substrate (200); annealing the silicon nitride layer (202), and then etching an active region (401) by using the silicon nitride layer (202) as a mask, so as to form in the semiconductor substrate (200) a trench (203) for filling an isolation material, wherein the active region (401) comprises a gate region (403) and a source region (404) and a drain region (405) that are respectively located on two sides of the gate region (403), and the gate region (403) comprises a body part connected to the source region (404) and the drain region (405) and a protruding part (406) that protrudes and extends from the body part to the trench; etching-back the silicon nitride layer (202) and forming a lining oxide layer (201) on the sidewall and the bottom of the trench; depositing an isolation material layer (205) to fill the trench; grinding the isolation material layer (205) until the top of the silicon nitride layer (202) is exposed; and etching to remove the silicon nitride layer (202).