公开(公告)号：US20170352749A1

公开(公告)日：2017-12-07

申请号：US15538450

申请日：2015-09-10

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Shukun QI

IPC: H01L29/739 ,  H01L29/08

CPC classification number: H01L29/7394 ,  H01L29/0834 ,  H01L29/7393

Abstract: A lateral insulated gate bipolar transistor comprises a substrate (10); an anode terminal located on the substrate, comprising: an N-type buffer region (51) located on the substrate (10); a P well (53) located in the N-type buffer region; an N-region (55) located in the P well (53); two P+ shallow junctions (57) located on a surface of the P well (53); and an N+ shallow junction (59) located between the two P+ shallow junctions (57); a cathode terminal located on the substrate; a draft region (30) between the anode terminal and cathode terminal; and a gate (62) between the anode terminal and cathode terminal.

公开(公告)号：US20180069107A1

公开(公告)日：2018-03-08

申请号：US15537753

申请日：2015-09-28

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Shukun QI

IPC: H01L29/739 ,  H01L29/423 ,  H01L21/265 ,  H01L21/324 ,  H01L21/225 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/762 ,  H01L29/66

CPC classification number: H01L29/7394 ,  H01L21/02236 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/7624 ,  H01L29/0623 ,  H01L29/0834 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/66325

Abstract: Provided is a lateral insulated-gate bipolar transistor (LIGBT), comprising a substrate (10), an anode terminal and a cathode terminal on the substrate (10), and a drift region (30) and a gate (61) located between the anode terminal and the cathode terminal. The anode terminal comprises a P-type buried layer (52) on the substrate (10), an N-type buffer region (54) on the P-type buried layer (52), and a P+ collector region (56) on the surface of the N-type buffer region (54). The LIGBT further comprises a trench gate adjacent to the anode terminal, wherein the trench gate penetrates from the surfaces of the N-type buffer region (54) and the P+ collector region (56) to the P-type buried layer (52), and the trench gate comprises an oxidation layer (51) on the inner surface of a trench and polysilicon (53) filled into the oxidation layer.