公开(公告)号：US09006867B2

公开(公告)日：2015-04-14

申请号：US14364933

申请日：2012-11-20

Applicant: CSMC Technologies FAB1 Co., Ltd.

Inventor： Xinwei Zhang ,  Changfeng Xia ,  Chengjian Fan ,  Wei Su

IPC: H01L21/66 ,  H01L21/306 ,  H01L21/308

CPC classification number: H01L22/30 ,  H01L21/30608 ,  H01L21/3083 ,  H01L22/12

Abstract: A monitoring structure and a relevant monitoring method for the silicon wet etching depth are provided. The structure includes a wet etched groove formed on a monocrystalline silicon material with at least two top surfaces thereof being rectangular; and the top surface widths of the grooves are Wu and W1 respectively, Wu=du/0.71, and W1=du/0.71, where du is the maximum wet etching depth to be monitored, and d1 is the minimum of the wet etching depth to be monitored. The method includes: performing anisotropic wet etching on a monocrystalline silicon wafer according to a pattern with a monitoring pattern, forming an etched groove to be monitored and a structure for monitoring the depth of the groove, and then monitoring the structure to monitor the wet etching depth. The etching depth of the groove can be monitored with low costs, and a higher monitoring accuracy is obtained.

Abstract translation: 提供了硅湿蚀刻​​深度的监测结构和相关监测方法。 该结构包括形成在单晶硅材料上的湿蚀刻槽，其至少两个顶表面是矩形; 并且槽的顶面宽度分别为Wu和W1，Wu = du / 0.71，W1 = du / 0.71，其中du是要监测的最大湿蚀刻深度，d1是湿蚀刻深度的最小值 被监视。 该方法包括：根据具有监测图案的图案在单晶硅晶片上进行各向异性湿蚀刻，形成待监测的蚀刻凹槽和用于监测凹槽深度的结构，然后监测结构以监测湿蚀刻 深度。 可以以低成本监测凹槽的蚀刻深度，并且获得更高的监视精度。

公开(公告)号：US20140346647A1

公开(公告)日：2014-11-27

申请号：US14364933

申请日：2012-11-20

Applicant: CSMC TECHNOLOGIES FAB1 CO.,LTD

Inventor： Xinwei Zhang ,  Changfeng Xia ,  Chengjian Fan ,  Wei Su

IPC: H01L21/66 ,  H01L21/308

CPC classification number: H01L22/30 ,  H01L21/30608 ,  H01L21/3083 ,  H01L22/12

Abstract: A monitoring structure and a relevant monitoring method for the silicon wet etching depth are provided. The structure includes a wet etched groove formed on a monocrystalline silicon material with at least two top surfaces thereof being rectangular; and the top surface widths of the grooves are Wu and Wl respectively, Wu=du/0.71, and Wl=du/0.71, where du is the maximum wet etching depth to be monitored, and dl is the minimum of the wet etching depth to be monitored. The method includes: performing anisotropic wet etching on a monocrystalline silicon wafer according to a pattern with a monitoring pattern, forming an etched groove to be monitored and a structure for monitoring the depth of the groove, and then monitoring the structure to monitor the wet etching depth. The etching depth of the groove can be monitored with low costs, and a higher monitoring accuracy is obtained.

Abstract translation: 提供了硅湿蚀刻​​深度的监测结构和相关监测方法。 该结构包括形成在单晶硅材料上的湿蚀刻槽，其至少两个顶表面是矩形; 并且槽的顶面宽度分别为Wu和Wl，Wu = du / 0.71，Wl = du / 0.71，其中du是要监测的最大湿蚀刻深度，d1是湿蚀刻深度的最小值 被监视。 该方法包括：根据具有监测图案的图案在单晶硅晶片上进行各向异性湿蚀刻，形成待监测的蚀刻凹槽和用于监测凹槽深度的结构，然后监测结构以监测湿蚀刻 深度。 可以以低成本监测凹槽的蚀刻深度，并且获得更高的监视精度。