公开(公告)号：US20040198892A1

公开(公告)日：2004-10-07

申请号：US10814714

申请日：2004-03-31

Applicant: Cabot Microelectronics Corporation

Inventor： Heinz H. Busta ,  David W. Boldridge ,  Ronald E. Myers

IPC: C08K003/04 ,  C08K003/34 ,  C08K003/40

CPC classification number: C08K3/04

Abstract: A field emitter source and method for making same. An x-ray and a high energy electron source is fabricated from the field emitter. The field emitter source composition comprises carbon black and a mixing medium. An alternative method of field emitter formulation includes providing a quantity of silica with the carbon black and a mixing medium. An x-ray source comprises a substrate and a carbon black field emitter composition provided along a surface of the substrate and an extraction grid to pull electrons from the field emitter film and a metal film biased at high voltage to accelerate the electrons. A conductive film is further provided along an upper support structure of the source, such that when the conductive film is struck by the accelerated electrons, the upper support structure converts the impinging high-energy electrons into x-rays. A high energy electron source is also disclosed similar to the x-ray source but without a conductive film and with appropriate apertures to facilitate egress of the high energy electrons.

Abstract translation: 场致发射源及其制作方法。 x射线和高能电子源由场发射器制造。 场致发射源组合物包含炭黑和混合介质。 场发射体配方的另一种方法包括提供一定量的二氧化硅与炭黑和混合介质。 x射线源包括沿着衬底的表面设置的衬底和炭黑场发射器组合物，以及用于从场致发射膜拉电子的提取栅极和以高电压偏置的金属膜以加速电子。 沿着源的上支撑结构进一步提供导电膜，使得当导电膜被加速的电子撞击时，上支撑结构将入射的高能电子转换为x射线。 类似于X射线源，也没有导电膜，并且具有合适的孔以便于高能电子的出口，也公开了高能电子源。

公开(公告)号：US20040150322A1

公开(公告)日：2004-08-05

申请号：US10763552

申请日：2004-01-23

Applicant: Cabot Microelectronics Corporation

Inventor： Heinz H. Busta

IPC: H01J009/00 ,  H01J009/24 ,  H01J001/62

CPC classification number: H01J1/3042 ,  H01J1/3046 ,  H01J9/025 ,  H01J35/065 ,  H01J2201/30403 ,  H01J2201/30423

Abstract: A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be covered by a second insulating material. Next, the materials are removed from the end of the rod and the insulating layers are recessed with respect to the field emitter layer so that a gap is present between the field emitter layer and the rod. The layered rod may be operated as an electron source within a vacuum tube by applying a positive bias to the rod with respect to the field emitter material and applying a higher positive bias to an anode opposite the rod in the tube. Electrons will accelerate to the charged anode and generate soft X-rays.

Abstract translation: 一种用于制造电子源的操作和处理方法。 导电棒被绝缘层覆盖，例如通过将棒浸入绝缘溶液中。 然后将杆用场发射体材料覆盖以形成层状导电棒。 杆也可以被第二绝缘材料覆盖。 接下来，从杆的端部去除材料，并且绝缘层相对于场发射极层凹陷，使得在场发射极层和杆之间存在间隙。 层叠的杆可以通过相对于场致发射体材料向杆施加正偏压并且向与管中的杆相对的阳极施加更高的正偏压而在真空管内作为电子源来操作。 电子将加速到带电阳极并产生软X射线。

公开(公告)号：US20040159629A1

公开(公告)日：2004-08-19

申请号：US10779226

申请日：2004-02-13

Applicant: Cabot Microelectronics Corporation

Inventor： Heinz H. Busta

IPC: B44C001/22

CPC classification number: B81C1/00595

Abstract: The invention relates to processes for preparing microelectromechanical (MEM) devices. Multimaterial sacrificial layers are used in the processes of the invention, thus allowing for the fabrication of sophisticated devices. The invention also relates to MEM devices prepared according to the processes of the invention and to pre-MEM devices.

Abstract translation: 本发明涉及用于制备微机电（MEM）装置的方法。 在本发明的方法中使用多材料牺牲层，从而允许制造复杂的装置。 本发明还涉及根据本发明的方法和预MEM装置制备的MEM装置。