公开(公告)号：US20130213462A1

公开(公告)日：2013-08-22

申请号：US13771617

申请日：2013-02-20

Applicant: California Institute of Technology

Inventor： Nathan S. Lewis ,  Shu Hu

IPC: H01L31/0352

CPC classification number: H01L31/035236 ,  C01B13/0207 ,  C25B1/003 ,  C25B9/08 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0687 ,  H01L31/078 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconducting material having a photocatalyst such as nickel or nickel-molybdenum coated on the material. The photoelectrode includes an elongated axially integrated wire having at least two different wire compositions.

Abstract translation: 提供光电极，制造和使用方法，包括水分解系统。 光电极可以是具有涂覆在该材料上的诸如镍或镍 - 钼的光催化剂的半导体材料。 光电极包括具有至少两种不同的线组成的细长的轴向集成的线。

公开(公告)号：US20150101664A1

公开(公告)日：2015-04-16

申请号：US14512248

申请日：2014-10-10

Applicant: The California Institute of Technology

Inventor： Shu Hu ,  Nathan S. Lewis

IPC: H01L31/0224 ,  H01L31/0216

CPC classification number: C25B1/003 ,  C25B11/04

Abstract: A photoanode includes a passivation layer on a light absorber. The passivation layer is more resistant to corrosion than the light absorber. The photoanode includes a surface modifying layer that is location on the passivation layer such that the passivation layer is between the light absorber and the surface modifying layer. The surface modifying layer reduces a resistance of the passivation layer to conduction of holes out of the passivation layer.

Abstract translation: 光电阳极包括光吸收器上的钝化层。 钝化层比光吸收剂更耐腐蚀。 光电阳极包括位于钝化层上的表面改性层，使得钝化层位于光吸收剂和表面改性层之间。 表面改性层降低了钝化层对钝化层外的空穴导电的阻力。

公开(公告)号：US11349039B2

公开(公告)日：2022-05-31

申请号：US16130157

申请日：2018-09-13

Applicant: California Institute of Technology

Inventor： Nathan S. Lewis ,  Shu Hu

IPC: H01L31/18 ,  C25B1/55 ,  C25B9/19 ,  H01L31/0352 ,  H01L31/0687 ,  H01L31/078 ,  C01B13/02

Abstract: A photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconducting material having a photocatalyst such as nickel or nickel-molybdenum coated on the material. The photoelectrode includes an elongated axially integrated wire having at least two different wire compositions.

公开(公告)号：US20190013426A1

公开(公告)日：2019-01-10

申请号：US16130157

申请日：2018-09-13

Applicant: California Institute of Technology

Inventor： Nathan S. Lewis ,  Shu Hu

IPC: H01L31/0352 ,  C01B13/02 ,  C25B1/00 ,  C25B9/08 ,  H01L31/078 ,  H01L31/18 ,  H01L31/0687

Abstract: A photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconducting material having a photocatalyst such as nickel or nickel-molybdenum coated on the material. The photoelectrode includes an elongated axially integrated wire having at least two different wire compositions.

公开(公告)号：US10090425B2

公开(公告)日：2018-10-02

申请号：US13771617

申请日：2013-02-20

Applicant: California Institute of Technology

Inventor： Nathan S. Lewis ,  Shu Hu

IPC: H01L31/0352 ,  C25B1/00 ,  H01L31/0687 ,  H01L31/078 ,  H01L31/18 ,  C01B13/02 ,  C25B9/08

Abstract: A photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconducting material having a photocatalyst such as nickel or nickel-molybdenum coated on the material. The photoelectrode includes an elongated axially integrated wire having at least two different wire compositions.

公开(公告)号：US09976220B2

公开(公告)日：2018-05-22

申请号：US14512248

申请日：2014-10-10

Applicant: The California Institute of Technology

Inventor： Shu Hu ,  Nathan S. Lewis

IPC: C25B9/00 ,  C25B1/00 ,  C25B11/04

CPC classification number: C25B1/003 ,  C25B11/04

Abstract: A photoanode includes a passivation layer on a light absorber. The passivation layer is more resistant to corrosion than the light absorber. The photoanode includes a surface modifying layer that is location on the passivation layer such that the passivation layer is between the light absorber and the surface modifying layer. The surface modifying layer reduces a resistance of the passivation layer to conduction of holes out of the passivation layer.