Thin film electret microphone
    1.
    发明申请
    Thin film electret microphone 失效
    薄膜驻极体麦克风

    公开(公告)号:US20010033670A1

    公开(公告)日:2001-10-25

    申请号:US09859191

    申请日:2001-05-15

    Abstract: An electret formed by micro-machining technology on a support surface, including a self-powered electret sound transducer, preferably in the form of a microphone, formed by micro-machining technology. Each microphone is manufactured as a two-piece unit, comprising a microphone membrane unit and a microphone back plate, at least one of which includes an electret formed by micro-machining technology. When juxtaposed, the two units form a microphone that can produce a signal without the need for external biasing, thereby reducing system volume and complexity. The electret material used is a thin film of spin-on polytetrafluoroethylene (PTFE). An electron gun preferably is used for charge implantation. The electret has a saturated charged density in the range of about 2null10null5 C/m2 to about 8null10null4 C/m2. Thermal annealing is used to stabilize the implanted charge. An open circuit sensitivity of about 0.5 mV/Pa has been achieved for a hybrid microphone package.

    Abstract translation: 通过微加工技术在支撑表面上形成的驻极体,其包括通过微加工技术形成的优选以麦克风形式的自供电的驻极体声音传感器。 每个麦克风被制造成两件式的单元,其包括麦克风膜单元和麦克风背板,其中至少一个包括由微加工技术形成的驻极体。 当并置时,两个单元形成麦克风,其可以产生信号而不需要外部偏置,从而降低系统体积和复杂性。 使用的驻极体材料是旋涂聚四氟乙烯(PTFE)的薄膜。 电子枪优选用于电荷注入。 驻极体的饱和带电密度在约2×10 -5 C / m 2至约8×10 -4 C / m 2的范围内。 热退火用于稳定植入电荷。 对于混合麦克风封装已经实现了约0.5mV / Pa的开路灵敏度。

    Integrated surface-machined micro flow controller method and apparatus
    3.
    发明申请
    Integrated surface-machined micro flow controller method and apparatus 审中-公开
    综合表面加工微流量控制器的方法和装置

    公开(公告)号:US20040188648A1

    公开(公告)日:2004-09-30

    申请号:US10757030

    申请日:2004-01-13

    Abstract: A surface-micromachined mass flow controller (MFC) comprises an electrostatically actuated microvalve integrated with a thermal flow sensor. The microvalve comprises a normally-open diaphragm defining an aperture allowing fluid communication between first and second flow channels. The diaphragm includes a second electrode actuable toward a valve seat including a first electrode. Fabricated utilizing a multilayer Parylene process, the active microvalve and the flow sensor are integrated onto a single chip to perform closed-loop flow control. For flow control, both Pulse Width Modulation (PWM) and actuation voltage adjustment are demonstrated.

    Abstract translation: 表面微加工质量流量控制器(MFC)包括与热流传感器集成的静电致动微型阀。 微型阀包括限定允许第一和第二流动通道之间流体连通的孔的常开的隔膜。 隔膜包括能够朝向包括第一电极的阀座致动的第二电极。 采用多层Parylene工艺制造,将活性微型阀和流量传感器集成到单个芯片上,以执行闭环流量控制。 对于流量控制,展示了脉宽调制(PWM)和启动电压调节。

    Parylene capacitive accelerometer utilizing electrical fringing field sensing and method of making
    6.
    发明申请
    Parylene capacitive accelerometer utilizing electrical fringing field sensing and method of making 有权
    Parylene电容加速度计采用电边缘场感测和制作方法

    公开(公告)号:US20040239341A1

    公开(公告)日:2004-12-02

    申请号:US10798731

    申请日:2004-03-10

    CPC classification number: G01P15/125 G01P2015/0857

    Abstract: An accelerometer device comprises a dielectric seismic mass separated by a gap from an underlying comb-shaped planar capacitor. The principle for measuring acceleration detecting capacitance change according to movement of the dielectric mass in the fringe electrical field. This measuring principle is verified by FEM simulation. The simple structure of the accelerometer device allows the polymer Parylene to be used as the proof mass, greatly simplifying the technology by requiring only surface micromachining. Prototype accelerometers are fabricated and calibrated with the aid of off-chip capacitive readout IC.

    Abstract translation: 加速度计装置包括由与下面的梳状平面电容器间隔开的电介质地震块。 根据介质质量在边缘电场中的移动量测加速度检测电容的原理。 该测量原理通过有限元模拟验证。 加速度计装置的简单结构允许将聚对苯二甲酸乙烯酯用作验证质量,通过仅需要表面微加工大大简化了技术。 借助于片外电容读出IC制造和校准原型加速度计。

    Electret generator apparatus and method
    8.
    发明申请
    Electret generator apparatus and method 审中-公开
    驻极体发生器装置及方法

    公开(公告)号:US20040007877A1

    公开(公告)日:2004-01-15

    申请号:US10455755

    申请日:2003-06-04

    CPC classification number: H02N1/08

    Abstract: An apparatus for power generation. The apparatus has a first substrate comprising a conductive surface region and a second substrate coupled to the first substrate. Preferably, the second substrate comprises an electret material region, which is characterized by a substantially uniform electric field associated with the electret material region. The conductive substrate and the electret substrate are aligned in a significantly parallel fashion with a common area of each region directly facing the other region (A). A distance (d) characterizing a spatial separation is formed between the conductive surface region and the electret material region. A relative voltage potential (V) between the conductive substrate and the electret substrate is associated with the distance (d). In between the conductive substrate and the electret substrate is a material, liquid, gas, or combination with an associated permittivity (null0). The relative voltage potential changes based upon a change in the spatial separation between (d), a change in the overlapping area (A), or a change in the permittivity (null0) between the conductive surface region and the electret material region.

    Abstract translation: 发电装置。 该装置具有包括导电表面区域的第一衬底和耦合到第一衬底的第二衬底。 优选地,第二衬底包括驻极体材料区域,其特征在于与驻极体材料区域相关联的基本均匀的电场。 导电基板和驻极体基板以与每个区域的直接面向另一区域(A)的公共区域显着平行的方式排列。 在导电表面区域和驻极体材料区域之间形成表征空间分离的距离(d)。 导电衬底和驻极体衬底之间的相对电压电位(V)与距离(d)相关联。 在导电基板和驻极体基板之间是具有相关介电常数(ε0)的材料,液体,气体或组合。 基于(d),重叠区域(A)的变化或导电表面区域和驻极体材料区域之间的介电常数(ε0)的变化的空间间隔的变化,相对电压电位发生变化。

    Method and resulting device for fabricating electret materials on bulk substrates
    10.
    发明申请
    Method and resulting device for fabricating electret materials on bulk substrates 审中-公开
    用于在散装衬底上制造驻极体材料的方法和所得装置

    公开(公告)号:US20040016120A1

    公开(公告)日:2004-01-29

    申请号:US10455226

    申请日:2003-06-04

    CPC classification number: H02N1/08 Y10T29/49226

    Abstract: An electret device. The device has a thickness of substrate material having a contact region. An electrically floating conducting region is formed overlying the thickness of substrate material. The floating conducting region is free from physical contact with the contact region. A protective layer is formed overlying the floating conductive layer. The protective layer has a surface region and seals the floating conducting region. The thickness of substrate material, floating conducting region, and protective layer form a sandwiched structure having a charge density of at least 1null10null4 Coulombs/m2 and a peak to peak charge uniformity of 5% and less.

    Abstract translation: 驻极体装置 该器件具有具有接触区域的衬底材料的厚度。 形成覆盖衬底材料的厚度的电浮动导电区域。 浮动导电区域与接触区域没有物理接触。 形成覆盖浮动导电层的保护层。 保护层具有表面区域并密封浮动导电区域。 基板材料,浮动导电区域和保护层的厚度形成电荷密度为至少1×10 -4库仑/ m 2且峰峰值电荷均匀度为5%以下的夹层结构。

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