公开(公告)号：US20230193439A1

公开(公告)日：2023-06-22

申请号：US18083261

申请日：2022-12-16

Applicant: Carpenter Technology Corporation

Inventor： Stephane Alexis Jacques Forsik ,  Mario Epler ,  Alojz Kajinic ,  Gaurav Lalwani ,  Logan Smith

IPC: C22C38/58 ,  C22C38/52 ,  C22C38/44 ,  C22C38/42 ,  C22C38/02 ,  C22C38/00 ,  C21D6/00

CPC classification number: C22C38/58 ,  C22C38/52 ,  C22C38/44 ,  C22C38/42 ,  C22C38/02 ,  C22C38/001 ,  C21D6/008 ,  C21D6/007 ,  C21D6/005 ,  C21D6/004 ,  C23C8/08

Abstract: A method for fabricating an article includes forming a billet consisting essentially of a stainless steel composition of



manganese 2.00 wt. %-24.00 wt. %
chromium 19.00 wt. %-30 wt. %
molybdenum 0.50 wt. %-4.0 wt. %
nitrogen 0.25 wt. %-1.10 wt. %
carbon ≤1 wt. %
phosphorus ≤0.03 wt. %
sulfur ≤1 wt. %
nickel

公开(公告)号：US12188112B2

公开(公告)日：2025-01-07

申请号：US18083261

申请日：2022-12-16

Applicant: Carpenter Technology Corporation

Inventor： Stephane Alexis Jacques Forsik ,  Mario Epler ,  Alojz Kajinic ,  Gaurav Lalwani ,  Logan Smith

IPC: C22C38/58 ,  C21D6/00 ,  C22C38/00 ,  C22C38/02 ,  C22C38/42 ,  C22C38/44 ,  C22C38/52 ,  C23C8/08 ,  C23C8/22 ,  C23C8/26 ,  C23C8/32

Abstract: A method for fabricating an article includes forming a billet consisting essentially of a stainless steel composition of manganese 2.00 wt. %-24.00 wt. % chromium 19.00 wt. %-30 wt. % molybdenum 0.50 wt. %-4.0 wt. % nitrogen 0.25 wt. %-1.10 wt. % carbon ≤1 wt. % phosphorus ≤0.03 wt. % sulfur ≤1 wt. % nickel

公开(公告)号：US20240368737A1

公开(公告)日：2024-11-07

申请号：US18653412

申请日：2024-05-02

Applicant: Carpenter Technology Corporation

Inventor： Ning Zhou ,  Wesley Roth ,  Tao Wang ,  Gian Colombo ,  Mario Epler

IPC: C22C19/05 ,  C22C1/02

Abstract: A low coefficient of thermal expansion high strength alloy and methods of formation thereof, the alloy including: chromium 7 wt. % to 10 wt. %; molybdenum 20 wt. % to 25 wt. %; tungsten 4 wt. % to 7 wt. %; aluminum 0.5 wt. % to 2 wt. %; titanium 0.5 wt. % to 2 wt. %; boron 0.005 wt. % to 0.05 wt. %; niobium ≤3.9 wt. % tantalum ≤3.9 wt. % vanadium 0.1 wt. % to 4 wt. %; niobium, tantalum, and vanadium, in combination 0.1 wt. % to 4 wt. %; silicon