公开(公告)号：US10854281B2

公开(公告)日：2020-12-01

申请号：US16537615

申请日：2019-08-11

Applicant: Chao-Jing Tang

Inventor： Chao-Jing Tang

IPC: G11C11/419 ,  G11C11/418 ,  G11C11/408 ,  G11C11/406 ,  G11C11/409 ,  G11C11/4094 ,  G11C11/412 ,  G11C7/10 ,  G11C7/12 ,  G11C5/14 ,  G11C11/4074 ,  G11C11/4093 ,  G11C11/4096 ,  G11C11/405

Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.

公开(公告)号：US20190362778A1

公开(公告)日：2019-11-28

申请号：US16533755

申请日：2019-08-06

Applicant: Chao-Jing Tang

Inventor： Chao-Jing Tang

IPC: G11C11/419 ,  G11C11/409 ,  G11C11/406 ,  G11C11/408 ,  G11C11/412 ,  G11C11/418 ,  G11C5/14 ,  G11C11/4094 ,  G11C11/4074 ,  G11C11/405 ,  G11C7/12

Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.

公开(公告)号：US20190362779A1

公开(公告)日：2019-11-28

申请号：US16537615

申请日：2019-08-11

Applicant: Chao-Jing Tang

Inventor： Chao-Jing Tang

IPC: G11C11/419 ,  G11C11/409 ,  G11C11/406 ,  G11C11/408 ,  G11C11/418

Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.

公开(公告)号：US10699777B2

公开(公告)日：2020-06-30

申请号：US16533755

申请日：2019-08-06

Applicant: Chao-Jing Tang

Inventor： Chao-Jing Tang

IPC: G11C11/419 ,  G11C11/418 ,  G11C11/408 ,  G11C11/406 ,  G11C11/409 ,  G11C11/4094 ,  G11C11/412 ,  G11C7/10 ,  G11C7/12 ,  G11C5/14 ,  G11C11/4074 ,  G11C11/4093 ,  G11C11/4096 ,  G11C11/405

Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.

公开(公告)号：US10482951B2

公开(公告)日：2019-11-19

申请号：US15694859

申请日：2017-09-04

Applicant: Chao-Jing Tang

Inventor： Chao-Jing Tang

IPC: G11C11/419 ,  G11C11/418 ,  G11C11/408 ,  G11C11/406 ,  G11C11/409 ,  G11C5/14 ,  G11C7/12 ,  G11C11/405 ,  G11C11/4074 ,  G11C11/4094 ,  G11C11/412

Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.

公开(公告)号：US20180114567A1

公开(公告)日：2018-04-26

申请号：US15694859

申请日：2017-09-04

Applicant: Chao-Jing Tang

Inventor： Chao-Jing Tang

IPC: G11C11/419 ,  G11C11/418 ,  G11C11/409 ,  G11C11/406 ,  G11C11/408

Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.