公开(公告)号：US09170496B2

公开(公告)日：2015-10-27

申请号：US13365660

申请日：2012-02-03

Applicant: Chi-Hua Fu ,  Chung-Cheng Wang

Inventor： Chi-Hua Fu ,  Chung-Cheng Wang

IPC: B08B3/02 ,  B08B3/00 ,  B08B7/00 ,  B08B7/04 ,  G03F7/16 ,  G03F7/09 ,  G03F7/095

CPC classification number: G03F7/16 ,  B08B3/00 ,  B08B3/02 ,  B08B7/00 ,  B08B7/04 ,  G03F7/091 ,  G03F7/094 ,  G03F7/095

Abstract: A method for pre-treating a wafer surface before applying a material thereon. The method includes positioning the wafer on a rotating apparatus. The wafer is rotated at a first rotational speed between about 50 revolutions per minute (rpm) and about 300 rpm and for a period of about 1 second to about 10 seconds while dispensing a cleaning solvent on the wafer surface. The wafer is rotated at a second rotational speed between about 500 rpm and about 1,500 rpm for a period of about 1 second to about 10 seconds. The wafer is then rotated at a third rotational speed between about 50 rpm and about 300 rpm for a period of about 1 second to about 5 seconds. With the wafer rotating at the third rotational speed, a solvent-containing material is thereafter deposited on the surface of the wafer.

Abstract translation: 一种在施加材料之前预处理晶片表面的方法。 该方法包括将晶片定位在旋转装置上。 以约50转/分钟（rpm）和约300rpm之间的第一旋转速度旋转晶片，并且在晶片表面上分配清洁溶剂约1秒至约10秒的时间。 晶片以约500rpm至约1500rpm之间的第二转速旋转约1秒至约10秒的时间。 然后将晶片以约50rpm至约300rpm之间的第三转速旋转约1秒至约5秒的时间。 随着晶片以第三转速旋转，此后在晶片的表面上沉积含溶剂的材料。