MEMORY CONTROLLERS AND PAD SEQUENCE CONTROL METHODS THEREOF
    2.
    发明申请
    MEMORY CONTROLLERS AND PAD SEQUENCE CONTROL METHODS THEREOF 有权
    存储器控制器及其序列控制方法

    公开(公告)号:US20080304352A1

    公开(公告)日:2008-12-11

    申请号:US11760955

    申请日:2007-06-11

    CPC classification number: G06F13/1694

    Abstract: Memory controllers and methods of optimizing pad sequences thereof are provided. At least two different preferred trace sequences on printed circuit boards for at least one memory device are first provided. One memory controller is then provided to have a core logic circuit, a plurality of input/output (I/O) devices, and a reorderer. The core logic has I/O terminals. Each I/O device on the single chip has a pad. The reorderer is coupled between the core logic circuit and the input/output devices, programmable to selectively connect the input/output devices to the input/output terminals. The reorderer is later programmed to select and connect a portion of the input/output devices to the input/output terminals such that one of the different preferred trace sequences is substantially supported.

    Abstract translation: 提供了存储器控制器及其优化焊盘序列的方法。 首先提供用于至少一个存储器件的印刷电路板上的至少两个不同的优选迹线序列。 然后提供一个存储器控制器以具有核心逻辑电路,多个输入/输出(I / O)设备和重新启动器。 核心逻辑有I / O端子。 单个芯片上的每个I / O设备都有一个焊盘。 重排器耦合在核心逻辑电路和输入/输出设备之间,可编程以将输入/输出设备选择性地连接到输入/输出端子。 后续程序随后被编程为选择并将输入/输出设备的一部分连接到输入/输出端子,使得基本上支持不同优选轨迹序列之一。

    Memory systems and memory access methods
    7.
    发明授权
    Memory systems and memory access methods 有权
    内存系统和内存访问方法

    公开(公告)号:US07486105B2

    公开(公告)日:2009-02-03

    申请号:US11625368

    申请日:2007-01-22

    Applicant: Ching-Chih Li

    Inventor: Ching-Chih Li

    CPC classification number: G06F13/4086

    Abstract: A memory system includes a first memory unit, a transmission bus having an impedance, and a memory controller having a first on-die termination circuit, coupled to the first memory unit through the transmission bus. The first on-die termination circuit matches the impedance of the transmission bus in response to the memory controller writing data to the first memory unit.

    Abstract translation: 存储器系统包括第一存储器单元,具有阻抗的传输总线和具有第一片上终端电路的存储器控​​制器,其通过传输总线耦合到第一存储器单元。 第一片上终端电路响应于存储器控制器将数据写入第一存储器单元来匹配传输总线的阻抗。

    MEMORY SYSTEMS AND MEMORY ACCESS METHODS
    8.
    发明申请
    MEMORY SYSTEMS AND MEMORY ACCESS METHODS 有权
    存储器系统和存储器访问方法

    公开(公告)号:US20080177913A1

    公开(公告)日:2008-07-24

    申请号:US11625368

    申请日:2007-01-22

    Applicant: Ching-Chih Li

    Inventor: Ching-Chih Li

    CPC classification number: G06F13/4086

    Abstract: A memory system includes a first memory unit, a transmission bus having an impedance, and a memory controller having a first on-die termination circuit, coupled to the first memory unit through the transmission bus. The first on-die termination circuit matches the impedance of the transmission bus in response to the memory controller writing data to the first memory unit.

    Abstract translation: 存储器系统包括第一存储器单元,具有阻抗的传输总线和具有第一片上终端电路的存储器控​​制器,其通过传输总线耦合到第一存储器单元。 第一片上终端电路响应于存储器控制器将数据写入第一存储器单元来匹配传输总线的阻抗。

    LAYOUT CIRCUIT
    10.
    发明申请
    LAYOUT CIRCUIT 有权
    布局电路

    公开(公告)号:US20080257583A1

    公开(公告)日:2008-10-23

    申请号:US11853061

    申请日:2007-09-11

    Applicant: Ching-Chih Li

    Inventor: Ching-Chih Li

    Abstract: The layout circuit comprises a first 3×2 grid array and a second 3×2 grid array. The first 3×2 grid array comprises first, second and third signal contact points and the first and second fixed potential contact points are coupled to a first fixed potential. The first and second fixed potential contact points are arranged diagonally into the first 2×2 array and the first and second signal contact points are also arranged diagonally into the first 2×2 array. The second 3×2 grid array comprises fourth, fifth and sixth signal contact points and the third and fourth fixed potential contact points are coupled to the first fixed potential. The third and fourth fixed potential contact points are arranged diagonally into the second 2×2 array and the fourth and fifth signal contact points are also arranged diagonally into the second 2×2 array.

    Abstract translation: 布局电路包括第一3×2网格阵列和第二3×2网格阵列。 第一3×2网格阵列包括第一,第二和第三信号接触点,并且第一和第二固定电位接触点耦合到第一固定电位。 第一和第二固定电位接触点被对角地布置到第一2x2阵列中,并且第一和第二信号接触点也被对角地布置到第一2x2阵列中。 第二3×2网格阵列包括第四,第五和第六信号接触点,并且第三和第四固定电位接触点耦合到第一固定电位。 第三和第四固定电位接触点被对角地布置到第二2x2阵列中,并且第四和第五信号接触点也被对角地布置到第二2x2阵列中。

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