公开(公告)号：US08269310B2

公开(公告)日：2012-09-18

申请号：US12466675

申请日：2009-05-15

Applicant: Chiu-Chuan Chen

Inventor： Chiu-Chuan Chen

IPC: H01L21/02

CPC classification number: G02F1/136213 ,  G02F2001/136236 ,  G02F2001/136295 ,  G02F2201/305 ,  G02F2201/40 ,  H01L27/1255 ,  H01L27/1288

Abstract: Disclosed is a method of manufacturing a storage capacitor having increased aperture ratio: providing a substrate having a metal layer disposed thereon, and said metal layer is covered correspondingly with a first dielectric layer and a second dielectric layer in sequence; forming a photoresist layer with a uniform thickness to cover said second dielectric layer; performing a process of exposure-to-light and development to a portion of said photoresist layer that is correspondingly disposed over said metal layer sequentially, so that its thickness is less than its original thickness; removing said photoresist layer and etching said portion of said second dielectric layer, so that a thickness of said portion of said second dielectric layer is less than its original thickness, and the etching depth of said portion is greater than that of the other remaining portions of said second dielectric layer; and forming an electrode layer on said second dielectric layer.

Abstract translation: 公开了一种制造具有增加的开口率的存储电容器的方法：提供其上设置有金属层的基板，并且所述金属层依次由第一介电层和第二介电层覆盖; 形成均匀厚度的光致抗蚀剂层以覆盖所述第二介电层; 对所述光致抗蚀剂层的一部分进行曝光和发光处理，所述光致抗蚀剂层相应地依次设置在所述金属层上，使得其厚度小于其原始厚度; 去除所述光致抗蚀剂层并蚀刻所述第二电介质层的所述部分，使得所述第二电介质层的所述部分的厚度小于其原始厚度，并且所述部分的蚀刻深度大于其余部分的蚀刻深度 所述第二电介质层; 以及在所述第二电介质层上形成电极层。

公开(公告)号：US20100176485A1

公开(公告)日：2010-07-15

申请号：US12466675

申请日：2009-05-15

Applicant: Chiu-Chuan Chen

Inventor： Chiu-Chuan Chen

IPC: H01L29/92 ,  H01L21/02

CPC classification number: G02F1/136213 ,  G02F2001/136236 ,  G02F2001/136295 ,  G02F2201/305 ,  G02F2201/40 ,  H01L27/1255 ,  H01L27/1288

Abstract: Disclosed is a method of manufacturing a storage capacitor having increased aperture ratio: providing a substrate having a metal layer disposed thereon, and said metal layer is covered correspondingly with a first dielectric layer and a second dielectric layer in sequence; forming a photoresist layer with a uniform thickness to cover said second dielectric layer; performing a process of exposure-to-light and development to a portion of said photoresist layer that is correspondingly disposed over said metal layer sequentially, so that its thickness is less than its original thickness; removing said photoresist layer and etching said portion of said second dielectric layer, so that a thickness of said portion of said second dielectric layer is less than its original thickness, and the etching depth of said portion is greater than that of the other remaining portions of said second dielectric layer; and forming an electrode layer on said second dielectric layer.

Abstract translation: 公开了一种制造具有增加的开口率的存储电容器的方法：提供其上设置有金属层的基板，并且所述金属层依次由第一介电层和第二介电层覆盖; 形成均匀厚度的光致抗蚀剂层以覆盖所述第二介电层; 对所述光致抗蚀剂层的一部分进行曝光和发光处理，所述光致抗蚀剂层相应地依次设置在所述金属层上，使得其厚度小于其原始厚度; 去除所述光致抗蚀剂层并蚀刻所述第二电介质层的所述部分，使得所述第二电介质层的所述部分的厚度小于其原始厚度，并且所述部分的蚀刻深度大于其余部分的蚀刻深度 所述第二电介质层; 以及在所述第二电介质层上形成电极层。