Characterizing Integrated Photonics Devices

    公开(公告)号:US20220065743A1

    公开(公告)日:2022-03-03

    申请号:US17011401

    申请日:2020-09-03

    Abstract: An integrated circuit comprises: at least one photonic layer that includes one or more optical waveguides; a first optical coupler that couples at least a first optical mode outside of the photonic layer to a first waveguide in the photonic layer; a photonic device that includes one or more ports in the photonic layer; a first multi-port optical coupler that includes three or more ports in the photonic layer, including a first port optically coupled to the first optical coupler, a second port optically coupled to a first port of the photonic device, and a third port optically coupled to a first optical reflector configured to send substantially all optical power emitted from the third port of the first multi-port optical coupler back to the third port of the first multi-port optical coupler.

    Characterizing integrated photonics devices

    公开(公告)号:US11460372B2

    公开(公告)日:2022-10-04

    申请号:US17011401

    申请日:2020-09-03

    Abstract: An integrated circuit comprises: at least one photonic layer that includes one or more optical waveguides; a first optical coupler that couples at least a first optical mode outside of the photonic layer to a first waveguide in the photonic layer; a photonic device that includes one or more ports in the photonic layer; a first multi-port optical coupler that includes three or more ports in the photonic layer, including a first port optically coupled to the first optical coupler, a second port optically coupled to a first port of the photonic device, and a third port optically coupled to a first optical reflector configured to send substantially all optical power emitted from the third port of the first multi-port optical coupler back to the third port of the first multi-port optical coupler.

    Silicon photonics modulator using TM mode and with a modified rib geometry

    公开(公告)号:US20210271120A1

    公开(公告)日:2021-09-02

    申请号:US17320345

    申请日:2021-05-14

    Abstract: An optical modulator includes a rib; and a slab interconnected to both sides of the rib; wherein the rib is dimensioned relative to the slab to support guiding of a Transverse Magnetic (TM) mode with a main lobe that propagates orthogonal to the slab and with the main lobe substantially excluded from the slab. The rib guides wavelengths in an infrared range in the TM mode. A height of the rib, relative to the slab, is about half of a width of the rib, between the slab.

    Silicon photonics modulator using TM mode and with a modified rib geometry

    公开(公告)号:US20200073154A1

    公开(公告)日:2020-03-05

    申请号:US16554736

    申请日:2019-08-29

    Abstract: A silicon photonics modulator includes a rib that is a PN junction; a slab including a P doped region adjacent to the waveguide core on a first side and an N doped region adjacent to the waveguide core on a second side, opposite the first side; and a first electrode connected to the P-doped region and a second electrode connected to the N-doped region, wherein the rib is dimensioned to support guiding of a Transverse Magnetic (TM) mode with a main lobe that propagates orthogonal to the slab. The rib guides wavelengths in an infrared range in the TM mode.

    Characterizing integrated photonics devices

    公开(公告)号:US12209929B2

    公开(公告)日:2025-01-28

    申请号:US17944517

    申请日:2022-09-14

    Abstract: An integrated circuit comprises: at least one photonic layer that includes one or more optical waveguides; a first optical coupler that couples at least a first optical mode outside of the photonic layer to a first waveguide in the photonic layer; a photonic device that includes one or more ports in the photonic layer; a first multi-port optical coupler that includes three or more ports in the photonic layer, including a first port optically coupled to the first optical coupler, a second port optically coupled to a first port of the photonic device, and a third port optically coupled to a first optical reflector configured to send substantially all optical power emitted from the third port of the first multi-port optical coupler back to the third port of the first multi-port optical coupler.

    Silicon photonics modulator using TM mode and with a modified rib geometry

    公开(公告)号:US11586059B2

    公开(公告)日:2023-02-21

    申请号:US17320345

    申请日:2021-05-14

    Abstract: An optical modulator includes a rib; and a slab interconnected to both sides of the rib; wherein the rib is dimensioned relative to the slab to support guiding of a Transverse Magnetic (TM) mode with a main lobe that propagates orthogonal to the slab and with the main lobe substantially excluded from the slab. The rib guides wavelengths in an infrared range in the TM mode. A height of the rib, relative to the slab, is about half of a width of the rib, between the slab.

    Characterizing Integrated Photonics Devices

    公开(公告)号:US20230003614A1

    公开(公告)日:2023-01-05

    申请号:US17944517

    申请日:2022-09-14

    Abstract: An integrated circuit comprises: at least one photonic layer that includes one or more optical waveguides; a first optical coupler that couples at least a first optical mode outside of the photonic layer to a first waveguide in the photonic layer; a photonic device that includes one or more ports in the photonic layer; a first multi-port optical coupler that includes three or more ports in the photonic layer, including a first port optically coupled to the first optical coupler, a second port optically coupled to a first port of the photonic device, and a third port optically coupled to a first optical reflector configured to send substantially all optical power emitted from the third port of the first multi-port optical coupler back to the third port of the first multi-port optical coupler.

    Silicon photonics modulator using TM mode and with a modified rib geometry

    公开(公告)号:US11022825B2

    公开(公告)日:2021-06-01

    申请号:US16554736

    申请日:2019-08-29

    Abstract: A silicon photonics modulator includes a rib that is a PN junction; a slab including a P doped region adjacent to the waveguide core on a first side and an N doped region adjacent to the waveguide core on a second side, opposite the first side; and a first electrode connected to the P-doped region and a second electrode connected to the N-doped region, wherein the rib is dimensioned to support guiding of a Transverse Magnetic (TM) mode with a main lobe that propagates orthogonal to the slab. The rib guides wavelengths in an infrared range in the TM mode.

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