公开(公告)号：US20160366656A1

公开(公告)日：2016-12-15

申请号：US15175871

申请日：2016-06-07

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： John L. MELANSON ,  Aaron J. BRENNAN ,  Justin DOUGHERTY ,  Ramya BALASUNDARAM

IPC: H04W52/36 ,  H04W52/32

CPC classification number: H04W52/367 ,  G01R31/2837 ,  G01R31/2875 ,  G01R31/311 ,  H04W52/32

Abstract: In accordance with embodiments of the present disclosure, a method for identifying a location of an integrated circuit that is sensitive to RTS noise may include applying localized heat to a scan area of the integrated circuit, observing any change in one or more electrical parameters of the integrated circuit in response to the localized heat being applied to the scan area indicative of sensitivity to RTS noise, and identifying the location sensitive to RTS noise responsive to observing change in one or more electrical parameters of the integrated circuit indicative of sensitivity to RTS noise in response to the localized heat being applied to the scan area.

Abstract translation: 根据本公开的实施例，用于识别对RTS噪声敏感的集成电路的位置的方法可以包括将局部热应用于集成电路的扫描区域，观察该集成电路的一个或多个电参数中的任何变化 集成电路响应于局部热被施加到指示对RTS噪声的敏感性的扫描区域，以及响应于观察指示对RTS噪声的敏感性的集成电路的一个或多个电参数的变化来识别对RTS噪声敏感的位置 响应于局部加热被施加到扫描区域。

公开(公告)号：US20190103490A1

公开(公告)日：2019-04-04

申请号：US15720977

申请日：2017-09-29

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Scott WARRICK ,  Justin DOUGHERTY ,  Alexander BARR ,  Christian LARSEN ,  Marc L. TARABBIA ,  Ying YING

IPC: H01L29/78 ,  H01L21/8238 ,  H01L29/06 ,  H01L21/76

Abstract: A dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) may include a MOSFET having a channel region, a drain, and a source, a first gate formed proximate to the channel region, a drain extension region formed proximate to the drain, and a second gate formed proximate to the drain extension region.