公开(公告)号：US20210217883A1

公开(公告)日：2021-07-15

申请号：US16741835

申请日：2020-01-14

Applicant: Cree, Inc.

Inventor： Evan Jones ,  Jeremy Fisher

IPC: H01L29/778 ,  H01L49/02 ,  H01L29/92 ,  H01L29/45

Abstract: A High Mobility Electron Transistor (HEMT) and a capacitor co-formed on an integrated circuit (IC) share at least one structural feature, thereby tightly integrating the two components. In one embodiment, the shared feature may be a 2DEG channel of the HEMT, which also functions in lieu of a base metal layer of a conventional capacitor. In another embodiment, a dialectic layer of the capacitor may be formed in a passivation step of forming the HEMT. In another embodiment, a metal contact of the HEMT (e.g., source, gate, or drain contact) comprises a metal layer or contact of the capacitor. In these embodiments, one or more processing steps required to form a conventional capacitor are obviated by exploiting one or more processing steps already performed in fabrication of the HEMT.

公开(公告)号：US10923585B2

公开(公告)日：2021-02-16

申请号：US16440427

申请日：2019-06-13

Applicant: Cree, Inc.

Inventor： Kyle Bothe ,  Evan Jones ,  Dan Namishia ,  Chris Hardiman ,  Fabian Radulescu ,  Jeremy Fisher ,  Scott Sheppard

IPC: H01L31/101 ,  H01L21/338 ,  H01L29/778 ,  H01L23/48 ,  H01L29/66 ,  H01L21/768

Abstract: A high electron mobility transistor (HEMT) includes a substrate comprising a first surface and a second surface on opposing sides of the substrate, a channel layer on the first surface of the substrate opposite the substrate, a barrier layer on the channel layer, a source contact comprising a first ohmic contact on an upper surface of the barrier layer, and a via extending from the second surface of the substrate to the first ohmic contact.

公开(公告)号：US20210111254A1

公开(公告)日：2021-04-15

申请号：US16600825

申请日：2019-10-14

Applicant: Cree, Inc.

Inventor： Evan Jones ,  Terry Alcorn ,  Jia Guo ,  Fabian Radulescu ,  Scott Sheppard

IPC: H01L29/40 ,  H01L29/778 ,  H01L29/66

Abstract: A transistor includes a semiconductor layer structure, a source electrode and a drain electrode on the semiconductor layer structure, a gate on a surface of the semiconductor layer structure between the source electrode and the drain electrode, and a field plate. The field plate includes a first portion adjacent the gate and a second portion adjacent the source or drain electrode. The second portion of the field plate is farther from the surface of the semiconductor layer structure than the first portion of the field plate, and is closer to the surface of the semiconductor layer structure than an extended portion of the gate. Related devices and fabrication methods are also discussed.

公开(公告)号：US20210175351A1

公开(公告)日：2021-06-10

申请号：US17180048

申请日：2021-02-19

Applicant: Cree, Inc.

Inventor： Kyle Bothe ,  Evan Jones ,  Dan Namishia ,  Chris Hardiman ,  Fabian Radulescu ,  Terry Alcorn ,  Scott Sheppard ,  Bruce Schmukler

IPC: H01L29/778 ,  H01L21/306 ,  H03F1/02 ,  H01L29/40 ,  H03F3/21 ,  H01L21/285 ,  H01L29/45 ,  H01L29/417 ,  H01L29/20 ,  H01L29/66 ,  H01L21/765 ,  H01L29/205

Abstract: A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.

公开(公告)号：US11257940B2

公开(公告)日：2022-02-22

申请号：US16741835

申请日：2020-01-14

Applicant: Cree, Inc.

Inventor： Evan Jones ,  Jeremy Fisher

IPC: H01L29/778 ,  H01L49/02 ,  H01L29/45 ,  H01L29/92

Abstract: A High Mobility Electron Transistor (HEMT) and a capacitor co-formed on an integrated circuit (IC) share at least one structural feature, thereby tightly integrating the two components. In one embodiment, the shared feature may be a 2DEG channel of the HEMT, which also functions in lieu of a base metal layer of a conventional capacitor. In another embodiment, a dialectic layer of the capacitor may be formed in a passivation step of forming the HEMT. In another embodiment, a metal contact of the HEMT (e.g., source, gate, or drain contact) comprises a metal layer or contact of the capacitor. In these embodiments, one or more processing steps required to form a conventional capacitor are obviated by exploiting one or more processing steps already performed in fabrication of the HEMT.

公开(公告)号：US11075271B2

公开(公告)日：2021-07-27

申请号：US16600825

申请日：2019-10-14

Applicant: Cree, Inc.

Inventor： Evan Jones ,  Terry Alcorn ,  Jia Guo ,  Fabian Radulescu ,  Scott Sheppard

IPC: H01L29/40 ,  H01L29/66 ,  H01L29/778

Abstract: A transistor includes a semiconductor layer structure, a source electrode and a drain electrode on the semiconductor layer structure, a gate on a surface of the semiconductor layer structure between the source electrode and the drain electrode, and a field plate. The field plate includes a first portion adjacent the gate and a second portion adjacent the source or drain electrode. The second portion of the field plate is farther from the surface of the semiconductor layer structure than the first portion of the field plate, and is closer to the surface of the semiconductor layer structure than an extended portion of the gate. Related devices and fabrication methods are also discussed.

公开(公告)号：US10971612B2

公开(公告)日：2021-04-06

申请号：US16555036

申请日：2019-08-29

Applicant: Cree, Inc.

Inventor： Kyle Bothe ,  Evan Jones ,  Dan Namishia ,  Chris Hardiman ,  Fabian Radulescu ,  Terry Alcorn ,  Scott Sheppard ,  Bruce Schmukler

IPC: H01L31/101 ,  H01L21/338 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/45 ,  H01L21/306 ,  H01L21/765 ,  H01L29/66 ,  H01L29/417 ,  H03F3/21 ,  H03F1/02 ,  H01L21/285

Abstract: A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.