公开(公告)号：US20140269042A1

公开(公告)日：2014-09-18

申请号：US14294239

申请日：2014-06-03

Applicant: Crocus Technology S.A.

Inventor： Neal Berger ,  Jean-Pierre Nozières

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/1673

Abstract: The present disclosure concerns a magnetic random access memory cell containing a magnetic tunnel junction formed from an insulating layer comprised between a sense layer and a storage layer. The present disclosure also concerns a method for writing and reading the memory cell comprising, during a write operation, switching a magnetization direction of said storage layer to write data to said storage layer and, during a read operation, aligning magnetization direction of said sense layer in a first aligned direction and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction. The disclosed memory cell and method allow for performing the write and read operations with low power consumption and an increased speed.

Abstract translation: 本公开涉及一种磁性随机存取存储单元，其包含由包括感测层和存储层之间的绝缘层形成的磁性隧道结。 本公开还涉及一种用于写入和读取存储单元的方法，包括在写入操作期间切换所述存储层的磁化方向以将数据写入所述存储层，并且在读取操作期间，对准所述感测层的磁化方向 在第一对准方向上，并且通过测量所述磁性隧道结的第一电阻值来比较所述写入数据与所述第一对准方向。 所公开的存储单元和方法允许以低功耗和增加的速度执行写入和读取操作。

公开(公告)号：US09679626B2

公开(公告)日：2017-06-13

申请号：US14294239

申请日：2014-06-03

Applicant: Crocus Technology S.A.

Inventor： Neal Berger ,  Jean-Pierre Nozières

IPC: G11C17/16 ,  G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/1673

Abstract: The present disclosure concerns a magnetic random access memory cell containing a magnetic tunnel junction formed from an insulating layer comprised between a sense layer and a storage layer. The present disclosure also concerns a method for writing and reading the memory cell comprising, during a write operation, switching a magnetization direction of said storage layer to write data to said storage layer and, during a read operation, aligning magnetization direction of said sense layer in a first aligned direction and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction. The disclosed memory cell and method allow for performing the write and read operations with low power consumption and an increased speed.