公开(公告)号：US20240425968A1

公开(公告)日：2024-12-26

申请号：US18828935

申请日：2024-09-09

Applicant: CubicPV Inc.

Inventor： Michael D. Irwin ,  Marissa Higgins ,  David W. Miller

IPC: C23C14/08 ,  C23C14/24 ,  C23C14/32 ,  C23C14/34 ,  C23C14/50

Abstract: A method for solvent-free perovskite deposition. The method comprises loading a lead target and one or more samples adhered to a substrate holder into a deposition chamber, pumping down to a high vacuum pressure, and backfilling the deposition chamber with the vapor of a salt precursor to form a perovskite material.

公开(公告)号：US12116663B2

公开(公告)日：2024-10-15

申请号：US16852142

申请日：2020-04-17

Applicant: CubicPV Inc.

Inventor： Michael D. Irwin ,  Marissa Higgins ,  David W. Miller

IPC: C23C14/08 ,  C23C14/24 ,  C23C14/32 ,  C23C14/34 ,  C23C14/50

CPC classification number: C23C14/088 ,  C23C14/243 ,  C23C14/325 ,  C23C14/3407 ,  C23C14/50

Abstract: A method for solvent-free perovskite deposition. The method comprises loading a lead target and one or more samples adhered to a substrate holder into a deposition chamber, pumping down to a high vacuum pressure, and backfilling the deposition chamber with the vapor of a salt precursor to form a perovskite material.